2016
DOI: 10.1016/j.tsf.2016.08.074
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Characterization of zinc oxide films deposited in helium–oxygen and argon–helium–oxygen atmospheres by sputtering

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Cited by 2 publications
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“…This can be attributed to the penning ionization which provides more ionized oxygen atoms to promote the formation of various textures when He atoms are introduced into the Ar-O 2 mixed atmosphere. [35] It should be mentioned that the (200) diffraction peak of the He-implanted HEO film shifts slightly to larger angle than that of the asdeposited HEO film. It indicates that the interplanar spacing of the HEO films decreases because of the He implantation.…”
Section: Effects Of He Implantation On Surface Morphology and Crystal...mentioning
confidence: 98%
“…This can be attributed to the penning ionization which provides more ionized oxygen atoms to promote the formation of various textures when He atoms are introduced into the Ar-O 2 mixed atmosphere. [35] It should be mentioned that the (200) diffraction peak of the He-implanted HEO film shifts slightly to larger angle than that of the asdeposited HEO film. It indicates that the interplanar spacing of the HEO films decreases because of the He implantation.…”
Section: Effects Of He Implantation On Surface Morphology and Crystal...mentioning
confidence: 98%