Characterization of zinc telluride thin films deposited by two-source technique and post-annealed in nitrogen ambient

Aqili, Akram K.S.; Ali, Zulfiqar; Maqsood, Asghari

doi:10.1016/j.jcrysgro.2010.12.072

Cited by 12 publications

(5 citation statements)

References 20 publications

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“…2) show that all the ZnTe thin films (with or without immersion in phosphoric acid) prepared at the same substrate temperature and having almost the same thickness are present as a crystalline structure composed of cubic phase with a (111) preferred orientation. This structure and preferred orientation are common for ZnTe films deposited with a wide variety of techniques [1][2][3][4][5][6][7][8][9][10][11][12]. No notable changes in film structure or orientation were observed after immersion in phosphoric acid as in Fig.…”

Section: Structural Analysismentioning

confidence: 71%

“…The reduction of transmittance is attributed to the formation of Te excess layer on the film surface due to etching with phosphoric acid. The normal transmittance (T) for a system of thin film (of refractive index n and extinction coefficient k) on a transparent substrate (of refractive index n s ) surrounded by air and k 2 << n 2 can be written as [11,22]…”

Section: Optical Propertiesmentioning

confidence: 99%

“…Here, λ is the incident photon wavelength, d is the film thickness, φ is the phase angle, α is the absorption coefficient and σ is the RMS height of surface roughness(irregularity). It was found that the refractive index of the ZnTe films obeys the simple classical dispersion relation for a single oscillator centered at wavelength λ 0 [11,12,22] and expressed by…”

Section: Optical Propertiesmentioning

confidence: 99%

“…In addition to that doped ZnTe is used as a buffer layer, between CdTe absorber and metallic contact, in CdTe/CdS solar cells [5]. Due to importance of ZnTe a variety of methods have been utilized for deposition including pulsed laser deposition [1,5], sputtering [6,7], thermal evaporation [8][9][10][11][12], electron beam [13,14], screen printing [15], electro-deposition [16], brush plated [17] and closed space sublimation [3,[18][19][20]. It is obvious that the deposition method and post-treatment have a great effect on the physical properties of the films.…”

Section: Introductionmentioning

confidence: 99%

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Effect of phosphoric acid treatment on the physical properties of zinc telluride thin films

Aqili¹,

Abu-Omar²,

Al-Reyahi³

et al. 2023

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Zinc Telluride (ZnTe) films were prepared by the closed space sublimation (CSS) method. The effect of chemical treatments with concentrated phosphoric acid, on the optical, electric and structural properties of the films was studied. Zinc-blend structure of the polycrystalline nature of the films was confirmed by x-ray diffraction (XRD) spectra. The energy dispersive x-ray (EDX) shows an increase in Te ratio on the surface of the film as exposed to phosphoric acid. In addition, the dc electrical resistivity of the films was dropped considerably. The refractive index, thickness, and thickness irregularity of the films were determined by fitting of the optical transmittance spectra in the wavelength range 400 to 2500 nm. The effect, of treatment, on the optical parameters is also reported.

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Section: Structural Analysismentioning

confidence: 71%

Section: Optical Propertiesmentioning

confidence: 99%

Section: Optical Propertiesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Effect of phosphoric acid treatment on the physical properties of zinc telluride thin films

Aqili¹,

Abu-Omar²,

Al-Reyahi³

et al. 2023

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“…ZnTe has, in particular, been studied for solar cell applications because of its optimum energy gap of 2.24 eV at room temperature and its low electron affinity of 3.53 eV. For example, ZnTe can be used in solar cells as a back surface field (BSF) layer and as a p-type semiconductor material for a CdTe/ZnTe structure [4,5]. VI-II composites are more important semiconductors for photoconductive and photoelectric device applications than lead halide-based perovskite semiconductors.…”

Section: Introductionmentioning

confidence: 99%

Resulting Effect of the p-Type of ZnTe: Cu Thin Films of the Intermediate Layer in Heterojunction Solar Cells: Structural, Optical, and Electrical Characteristics

2023

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The microstructural, electrical, and optical properties of Cu-doped and undoped ZnTe thin films grown on glass substrates are covered in this article. To determine the chemical makeup of these materials, both energy-dispersive X-ray (EDAX) spectroscopy and X-ray photoelectron spectroscopy were employed. The cubic zinc-blende crystal structure of ZnTe and Cu-doped ZnTe films was discovered using X-ray diffraction crystallography. According to these microstructural studies, the average crystallite size increased as the amount of Cu doping increased, whereas the microstrain decreased as the crystallinity increased; hence, defects were minimized. The Swanepoel method was used to compute the refractive index, and it was found that the refractive index rises as the Cu doping levels rises. The optical band gap energy was observed to decrease from 2.225 eV to 1.941 eV as the Cu content rose from 0% to 8%, and then slightly increase to 1.965 eV at a Cu concentration of 10%. The Burstein–Moss effect may be connected to this observation. The larger grain size, which lessens the dispersion of the grain boundary, was thought to be the cause of the observed increase in the dc electrical conductivity with an increase in Cu doping. In structured undoped and Cu-doped ZnTe films, there were two carrier transport conduction mechanisms that could be seen. According to the Hall Effect measurements, all the grown films exhibited a p-type conduction behavior. In addition, the findings demonstrated that as the Cu doping level rises, the carrier concentration and the Hall mobility similarly rise, reaching an ideal Cu concentration of 8 at.%, which is due to the fact that the grain size decreases grain boundary scattering. Furthermore, we examined the impact of the ZnTe and ZnTe:Cu (at Cu 8 at.%) layers on the efficiency of the CdS/CdTe solar cells.

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Effect of Mn Doping on the Optical Properties of Chalcogenide Compounds ZnS and ZnTe

Klymov

Kurbatov

2020

Springer Proceedings in Physics

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Characterization of zinc telluride thin films deposited by two-source technique and post-annealed in nitrogen ambient

Cited by 12 publications

References 20 publications

Effect of phosphoric acid treatment on the physical properties of zinc telluride thin films

Effect of phosphoric acid treatment on the physical properties of zinc telluride thin films

Resulting Effect of the p-Type of ZnTe: Cu Thin Films of the Intermediate Layer in Heterojunction Solar Cells: Structural, Optical, and Electrical Characteristics

Effect of Mn Doping on the Optical Properties of Chalcogenide Compounds ZnS and ZnTe

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