2009
DOI: 10.1016/j.ijhydene.2008.09.108
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Characterization of ZnO films obtained by ultrasonic spray pyrolysis technique

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Cited by 87 publications
(32 citation statements)
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“…The figure shows that the ZnO has smooth surface morphology and relatively smaller particles, which are well connected to each other; it strongly adheres to the substrate and has tightly bounded particles. Inset in Figure 6 shows the SEM image reported by Ergin et al (Ergin et al, 2009). A close visual inspection reveals that the prepared sample in this work has similar surface morphology as reported by Ergin.…”
Section: (Deg)supporting
confidence: 76%
See 1 more Smart Citation
“…The figure shows that the ZnO has smooth surface morphology and relatively smaller particles, which are well connected to each other; it strongly adheres to the substrate and has tightly bounded particles. Inset in Figure 6 shows the SEM image reported by Ergin et al (Ergin et al, 2009). A close visual inspection reveals that the prepared sample in this work has similar surface morphology as reported by Ergin.…”
Section: (Deg)supporting
confidence: 76%
“…Zn and O elements came from ZnO film, on the other hand, C element was not anticipated in the film; obviously, the presence of C was due to the PPC substrate. Similarly, Ergin et al (Ergin et al, 2009) who studied the properties of ZnO deposited on glass substrate pointed out that Si and Ca elements were not expected to be in ZnO film and these two elements could have come from the glass substrates. The inset in Figure 7 shows the EDX image reported by them.…”
Section: Fig 6 Sem Image Of Zno Film On Ppc Substratementioning
confidence: 94%
“…The dislocation density (Table 2), which represents the number of defects in the film, is determined from the following equation. Dislocation densities exhibit a marked reduction with increasing annealing temperature, indicating a lower concentration of lattice imperfections (Ergin et al, 2009). …”
Section: Resultsmentioning
confidence: 99%
“…Dislocations are imperfections in a crystal associated with misregistry of the lattice in one part of the crystal with respect to another part. The dislocation density of the films is given by the Williamson and Smallman's relation ( [9]): δ = n/d 2 (1), where n is a factor equal to unity at the minimum dislocation density and d is the grain size. The dislocation densities decrease as the annealing temperature is raised, which indicates a lower concentration of lattice imperfections.…”
Section: Resultsmentioning
confidence: 99%