Characterization of ZnSe/ZnMgBeSe single quantum wells

Effects of Dielectric Confinement on Exciton Binding Energies in ZnSe/MgxBeyZn1-x-ySe Quantum Wells

“…2, where open circles indicate the experimental results cited in ref. 2. The value of ÁE for the calculated results is 210 meV, while the value of ÁE for the experimental results 2) has been estimated to be 236 meV using the band-to-band transition energy in the ZnMgBeSe layer and the band gap energy of ZnSe.…”

“…2. The value of ÁE for the calculated results is 210 meV, while the value of ÁE for the experimental results 2) has been estimated to be 236 meV using the band-to-band transition energy in the ZnMgBeSe layer and the band gap energy of ZnSe. The difference between the ÁE values in our calculated results and the results cited in ref.…”

“…1) Recently, optical properties of the Mg x Be y Zn 1ÀxÀy Se layer and compressively strained ZnSe/ Mg x Be y Zn 1ÀxÀy Se QWs have been reported. [2][3][4] The band gap energy of Mg x Be y Zn 1ÀxÀy Se is larger than that of ZnMgSSe because the band gap energy of BeSe is larger than that of MgSe. Godo et al have determined the exciton transition and exciton binding energies in ZnSe/Mg x Be y -Zn 1ÀxÀy Se QWs analytically.…”