2010
DOI: 10.1039/b923926j
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Characterizations and electrochemical behaviors of disproportionated SiO and its composite for rechargeable Li-ion batteries

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Cited by 260 publications
(196 citation statements)
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“…4,5 More generally, the Si+SiO 2 system is probably one of the most studied semiconductor+insulator systems due to its huge importance in the microelectronics industry. 6 Cluster beam experiments 7+10 and numerous computational modelling studies 11+21 have confirmed that the inherent tendency of SiO to segregate emerges in nanoclusters of only a few atoms and thereon for subsequently larger sizes strongly influences its structure and stability.…”
Section: " #mentioning
confidence: 99%
“…4,5 More generally, the Si+SiO 2 system is probably one of the most studied semiconductor+insulator systems due to its huge importance in the microelectronics industry. 6 Cluster beam experiments 7+10 and numerous computational modelling studies 11+21 have confirmed that the inherent tendency of SiO to segregate emerges in nanoclusters of only a few atoms and thereon for subsequently larger sizes strongly influences its structure and stability.…”
Section: " #mentioning
confidence: 99%
“…Figure 1 describes the sample preparation process for m-SiO. Si nano-crystallites and amorphous SiO 2 formed during heat treatment were surrounded with inactive Sisuboxide and did not reacted with Li in previous report, 3 HEMM process was employed to break the Si-suboxide. Figure 2b; and the size of Si crystallites was about 20 nm~30 nm.…”
mentioning
confidence: 99%
“…4 Because of this unstable state of solid SiO, the SiO could be transformed into a Si and SiO 2 when it was heat treated which is called a disproportionation reaction. 3 In this work, SiO was disproportionated by heat treatment and modified using a high-energy mechanical milling (HEMM) process to enhance electrochemical properties for application as an anode material for LIBs.The m-SiO (modified SiO) was prepared using heat treatment and HEMM. Among the samples, m 10 -SiO (milled for 10 h) showed the best electrochemical performance.…”
mentioning
confidence: 99%
“…As shown in Figure 5a (see Figure S4 for XPS spectra at variouss puttering times), the deconvoluted XPS Si 2p spectra for each valence state can be assigned to 0, + 1, + 2, + 3, and + 4, as has been previously reported in the literature. [36][37][38] In unmilled, pristine aSiO 2 ,t he signal for Si 4 + wasd ominant and there was no evidenceo fS i 0 .C onversely,a fter milling for 36 h, the signalf or the Si 4 + state decreased and that of the Si 3 + state increased. Furthermore, ap ronounced Si 0 peak waso bserved.…”
Section: Resultsmentioning
confidence: 88%