Characterizations of Electrolyte–Insulator–Semiconductor Sensors With Array Wells and a Stack-Sensing Membrane

Chen, Henry J. H.; Huang, Yo-Chen; Lee, Tzu Nien; Chen, Sun-Zen

doi:10.1109/ted.2020.3009646

Cited by 7 publications

(11 citation statements)

References 32 publications

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“…Compared to ISFET with 30 nm SiO 2 (−54 mV), hysteresis of device with APTES/SiO 2 stack-sensing membrane (21 mV) significantly improved, owing to the well-ordered amino groups (−NH 2 ). [97,98] The third one is "pH loop" factor. It was found that the hysteresis width in the FET-based sensor is dependent on measurement pH loop time, where the hysteresis increases with the improvement of loop time.…”

Section: Hysteresismentioning

confidence: 99%

Field‐Effect Transistor‐Based Biosensor for pH Sensing and Mapping

Ren

Liang

et al. 2023

Advanced Sensor Research

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It is vital to acquire real‐time pH signals with high resolution as pH variation can reflect important information regarding health status and physiological environment. Field‐effect transistor (FET)‐based biosensors (bio‐FETs), a kind of potentiometric sensor, are being rapidly developed for pH detection due to their advantages of high sensitivity, low temperature dependence, and high portability. More importantly, the high scalability of bio‐FETs renders them applicable for achieving high spatial resolution in pH sensing. In this review paper, the design, operation principle, and critical characteristics of the FET‐based pH sensor are introduced. Then, the recent progress in pH mapping with FET sensor arrays, including static array where a sensor pixel is directly addressed by wiring, and active‐matrix array where a sensor pixel is accessed by additional switching FETs, is presented. Last, typical examples of pH sensor arrays in biomedical applications, such as health monitoring and DNA sequencing and elongation are presented.

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Section: Hysteresismentioning

confidence: 99%

Field‐Effect Transistor‐Based Biosensor for pH Sensing and Mapping

Ren

Liang

et al. 2023

Advanced Sensor Research

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“…[16][17][18][19] Using the self-assembled monolayers is an alternative method to increase the reactive sites on the sensing membrane. As presented in previous studies, 20,21) using the 3aminopropyltriethoxysilane (APTES), which can be directly grown on the SiO 2 surface to form the sensing membrane stack, provides a favorable bio-interface. It can improve the sensitivity and suppress the non-ideality, such as hysteresis and drift, simultaneously.…”

Section: Introductionmentioning

confidence: 99%

Polycrystalline-silicon-based double-gate ion-sensitive field-effect transistors using APTES/SiO₂ stack-sensing membrane

Chen

Tseng

2022

Jpn. J. Appl. Phys.

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This study demonstrated a polycrystalline-silicon (poly-Si)-based double-gate (DG) ion-sensitive field-effect transistors (DG-ISFETs) using APTES/SiO2 stack-sensing membrane. The APTES/SiO2 stack-sensing membrane enhanced the single-gate (SG) sensitivity, and suppressed the hysteresis. The DG structure was preferred to have a capacitive coupling effect and to amplify the sensitivity of ISFETs. The sensitivities of SG- and DG-ISFETs were approximately 56.8 and 294 mV/pH, respectively. In addition, the corresponding amplifying factor was approximately 5.2. With this approach, the poly-Si DG-ISFETs can be a candidate for future high-performance biochemical sensing applications.

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“…Nanoimprint lithography (NIL) is a low-cost mass-production technology and an appropriate method for the dense and periodic pattern manufacturing. 15,[25][26][27][28]33 Besides, the silicon anisotropic/isotropic reactive-ion etching (RIE) processes for the undercutting or suspending structures, are CMOS comparable and wellestablished techniques for the nano/micro-electro-mechanical system (N/MEMS). 21,34,35 Using NIL and silicon anisotropic/isotropic RIE processes on the conventional silicon wafers can be an effective approach for the NW/GAA ISFETs development.…”

mentioning

confidence: 99%

“…With the surface modification by 3-aminopropyltriethoxysilane (C 9 H 23 NO 3 Si, APTES), surface terminals become the amine groups that show the biological affinity. Such sensing membrane of ISFETS, e.g., APTES/SiO 2 stack, 22,23,27,30,31 have offered and shown superior sensing properties for biochemical sensing applications. [22][23][24]27,30,31,36 In this study, by integrating the NIL technology and N/MEMS process, ISFETs with silicon wire array channels (SWA) and APTES/SiO 2 sensing membrane stacks were fabricated.…”

mentioning

confidence: 99%

“…Such sensing membrane of ISFETS, e.g., APTES/SiO 2 stack, 22,23,27,30,31 have offered and shown superior sensing properties for biochemical sensing applications. [22][23][24]27,30,31,36 In this study, by integrating the NIL technology and N/MEMS process, ISFETs with silicon wire array channels (SWA) and APTES/SiO 2 sensing membrane stacks were fabricated. The array wires were fabricated with the NIL technology and silicon anisotropic/isotropic RIE processes.…”

mentioning

confidence: 99%

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Characterizations of Ion-Sensitive Field-Effect Transistors with Silicon Wire Array Channels and Stack-Sensing Membrane

Chen

Lee

Tseng

et al. 2022

J. Electrochem. Soc.

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In this study, the characteristics of ion-sensitive field-effect transistors (ISFETs) with silicon wire array channels and sensing membrane stacks of 3-aminopropyltriethoxysilane (APTES)/SiO2 were investigated. Si wires were fabricated by nanoimprint lithography and Si anisotropic/isotropic reactive-ion etching processes. The Si wires, with a line width of ~200 nm, were undercut and nearly suspended, which formed an Ω-shape cross-section. The aspects of wires were investigated using an optical microscope, an atomic force microscope, a scanning electron microscope, and a transmission electron microscope. The sensitivity, hysteresis, and drift of ISFETs were investigated. The above sensing properties were all significantly improved with the proposed channels and the sensing membrane stacks. As such, high-performance ISFETs can be realized for future biochemical applications.

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Characterizations of Electrolyte–Insulator–Semiconductor Sensors With Array Wells and a Stack-Sensing Membrane

Cited by 7 publications

References 32 publications

Field‐Effect Transistor‐Based Biosensor for pH Sensing and Mapping

Field‐Effect Transistor‐Based Biosensor for pH Sensing and Mapping

Polycrystalline-silicon-based double-gate ion-sensitive field-effect transistors using APTES/SiO₂ stack-sensing membrane

Characterizations of Ion-Sensitive Field-Effect Transistors with Silicon Wire Array Channels and Stack-Sensing Membrane

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Characterizations of Electrolyte–Insulator–Semiconductor Sensors With Array Wells and a Stack-Sensing Membrane

Cited by 7 publications

References 32 publications

Field‐Effect Transistor‐Based Biosensor for pH Sensing and Mapping

Field‐Effect Transistor‐Based Biosensor for pH Sensing and Mapping

Polycrystalline-silicon-based double-gate ion-sensitive field-effect transistors using APTES/SiO2 stack-sensing membrane

Characterizations of Ion-Sensitive Field-Effect Transistors with Silicon Wire Array Channels and Stack-Sensing Membrane

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Polycrystalline-silicon-based double-gate ion-sensitive field-effect transistors using APTES/SiO₂ stack-sensing membrane