Characterizations of InN films on Si(111) substrate grown by metal-organic chemical vapor deposition with a predeposited In layer and a two-step growth method

Chang, K. J.; Chang, Jenq Yang; Chen, M. C.; Lahn, S. M.; Kao, Chien-Kang; Li, zizheng; Uen, Wu‐Yih; C., G.

doi:10.1116/1.2740293

Cited by 17 publications

(4 citation statements)

References 28 publications

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“…They reported that InN exhibits better wetting behaviour on the nitridated Al 2 O 3 surface than on Si (111). Finally, Chang et al [15] studied the effects of a predeposited In layer in the MOVPE growth of InN on Si (111).…”

Section: Introductionmentioning

confidence: 99%

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InN films and nanostructures grown on Si (111) by RF-MBE

Ajagunna

Adikimenakis

Iliopoulos

et al. 2009

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

“…In spite of these advantages, limited research efforts have focused on the growth and properties of InN on Si [12][13][14][15]. Grandal et al [12] reported the effect of growth temperature on the morphology of InN grown by nitrogen rf plasma source molecular beam epitaxy (RF-MBE).…”

Section: Introductionmentioning

confidence: 99%

InN films and nanostructures grown on Si (111) by RF-MBE

Ajagunna

Adikimenakis

Iliopoulos

et al. 2009

Journal of Crystal Growth

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“…Detailed growth procedures are the same as those previously described. 27) For Raman spectra measurements, the laser beam of 532 nm wavelength, serving as the excitation light source, is focused using a ×100 microscopic objective. The scattered light is also collected by the objective and analyzed with a J. Y. Ramanor U 1000 double monochromator, equipped with a cooled charge coupled device detector.…”

Section: Experimental Methodsmentioning

confidence: 99%

Investigation of valence-band splitting in InN by low-temperature photoreflectance spectroscopy

Lin

Chen

Cheng

et al. 2015

Jpn. J. Appl. Phys.

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Temperature-dependent photoluminescence (PL) and photoreflectance (PR) spectroscopy and room-temperature Raman spectroscopy and X-ray diffraction have been utilized to investigate the optical properties, electron concentration, crystalline quality, and electronic band structures, especially valence-band splittings, of InN films grown by plasma-assisted molecular beam epitaxy (PAMBE) and metal–organic chemical vapor deposition (MOCVD). The smaller thermal activation energies imply the PAMBE-grown InN film exhibits low-density localized states from band tail states. PR signals of the InN film are detectable when the temperature is below about 100 K due to the cooling down of free electrons to trap states. For the MOCVD-grown InN film, no PR signal is observed even at 15 K due to the higher free electron concentration. To analyze the energetic positions of the features in the PR spectra without ambiguity, the moduli of individual PR resonances are considered. Based on the PR results and appropriate Hamiltonian, the values of the crystal-field splitting and the spin–orbit splitting in InN are experimentally determined as 26.8 and 14.5 meV, respectively. Theoretical and experimental reports are compared and discussed to verify this result.

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“…[37][38][39][40] Also, experimental methods have proven successful in synthesizing a wide range of nanostructured InN materials. [41][42][43] Furthermore, the InN monolayer has been extensively studied using theoretical methods, which have conrmed its outstanding electronic properties. These investigations have revealed that the InN monolayer possesses a considerable band gap, specically 0.56 eV and 1.70 eV, respectively, according to DFT and GW calculations.…”

Section: Introductionmentioning

confidence: 99%