Characterizing carrier-trapping phenomena in ultrathin SiO2 films by using the x-ray photoelectron spectroscopy time-dependent measurements

Hagimoto, Yoshiya; Fujioka, Hiroshi; Oshima, Masaharu; Hirose, Kazuyuki

doi:10.1063/1.1334657

Cited by 28 publications

(17 citation statements)

References 28 publications

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“…Previously reported dynamical photoemission measurements have been either in the ultra-fast, sub-pico seconds regime using laser excitations [35][36][37], or in a much longer time regimes (10 1 to 10 4 min) with conventional XPS measurements [5,[41][42][43][44][45]. Our measurements fill this gap and provide information about charging/discharging dynamics of dielectric materials in the range of 10 −3 to 10 3 s, matching those of many important chemical-biochemical processes [46].…”

Section: Introductionmentioning

confidence: 75%

Methods for probing charging properties of polymeric materials using XPS

Sezen

Ertaş

Süzer

2010

Journal of Electron Spectroscopy and Related Phenomena

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a b s t r a c tVarious thin polystyrene, PS, and poly(methyl methacrylate), PMMA and PS + PMMA blend films have been examined using the technique of recording X-ray photoelectron spectrum while the sample is subjected to ±10 V d.c. bias, and three different forms of (square-wave (SQW), sinusoidal (SIN) and triangular (TRG)), a.c. pulses. All films exhibit charging shifts as observed in the position of the corresponding C1s peak under d.c. bias. The a.c. pulses convert the single C1s peak to twinned peaks in the case of the square-wave form, and distort severely in the cases of the SIN, and TRG forms, and all three of them exhibit strong frequency dependence. In order to mimic and better understand the behavior of these polymeric materials, an artificial dielectric system consisting of a clean Si-wafer coupled to an external 1 M resistor and 56 nF capacitor is created, and its response to different forms of voltage stimuli, is examined in detail. A simple electrical circuit model is also developed treating the system as consisting of a parallel resistor and a series capacitor. With the help of the model, the response of the artificial system is successfully calculated as judged by comparison with the experimental data. Using one high frequency SQW measurements, the off-set in the charging shift due to the extra low-energy neutralizing electrons is estimated. After correcting the corresponding off-set shifts, the XPS spectra of the three different PS films, one PMMA, and one PS + PMMA blend film are re-examined. As a result of these detailed analysis, there emerges a clear relationship between the thicknesses of the PS films with their charging abilities. In the blend film, PS and PMMA domains are electrically separated, and exhibit different charging shifts, however, the presence of one is felt by the other. Hence, the PS component shifts are larger in the blend, due to the presence of PMMA domains, which has intrinsically a larger R eff , and conversely the PMMA component shifts are smaller due to the presence of PS domains.

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Section: Introductionmentioning

confidence: 75%

Methods for probing charging properties of polymeric materials using XPS

Sezen

Ertaş

Süzer

2010

Journal of Electron Spectroscopy and Related Phenomena

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“…Tanimura, 1 H. Kamada, 1 S. Toyoda, 1,2,3 H. Kumigashira, 1,2,3 M. Oshima, 1,2,3,a͒ G. L. Liu, 4 Z. Liu, 4 We have investigated the charge density and N chemical states in HfSiON films annealed at various oxygen gas pressures by time-dependent photoemission spectroscopy. The Si 2p core-level spectra and the sample current reveal that annealing these films at low oxygen partial pressures affects the number of inherent fixed charges and annealing at high oxygen partial pressures results in a decrease in the number of trapped charges.…”

Section: Effects Of Thermal Annealing On Charge Density and N Chemicamentioning

confidence: 99%

Effects of thermal annealing on charge density and N chemical states in HfSiON films

Tanimura

Kamada

Toyoda

et al. 2009

Applied Physics Letters

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“…Firstly, x-ray irradiation for measurements affects peak positions of PES spectra, and the peak shifts show a different behaviour among each kind of dielectric film. [11,12] For precise determination of band offsets, it is necessary to exclude the effect of x-ray irradiation. Synchrotron radiation enables to measure PES spectra with the high signal-to-noise ratio in short time and evaluate the shift of PES spectra by x-ray irradiation.…”

Section: Introductionmentioning

confidence: 99%

Analysis of x‐ray irradiation effect in high‐k gate dielectrics by time‐dependent photoemission spectroscopy using synchrotron radiation

Tanimura

Toyoda

Kumigashira

et al. 2008

Surface & Interface Analysis

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We have developed a method to precisely determine the band offsets for hafnium oxide (HfO 2 ), hafnium silicate (HfSiO) and nitrided hafnium silicate (HfSiON) films on Si by elimination of x-ray irradiation effects with time-dependent photoemission spectroscopy (PES) and x-ray absorption spectroscopy. The core-level PES spectra shift during PES measurements, which is explained as the dielectric films charging due to photoemission by the x-ray irradiation. For elimination of the x-ray irradiation effect on the determination of the band offsets, time-dependent photoemission spectroscopy was performed. The precisely determined valence band offsets for HfO 2 , HfSiO and HfSiON are 3.2, 3.4, and 1.9 eV, respectively. On the other hand, the conduction band offsets are almost the same values of about 1.3 eV. Thus, the elimination of x-ray irradiation effect enables to precisely determine the band offsets, leading to the accurate estimation of gate leakage current.

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Characterizing carrier-trapping phenomena in ultrathin SiO2 films by using the x-ray photoelectron spectroscopy time-dependent measurements

Cited by 28 publications

References 28 publications

Methods for probing charging properties of polymeric materials using XPS

Methods for probing charging properties of polymeric materials using XPS

Effects of thermal annealing on charge density and N chemical states in HfSiON films

Analysis of x‐ray irradiation effect in high‐k gate dielectrics by time‐dependent photoemission spectroscopy using synchrotron radiation

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