Characterizing Memory Write References for Efficient Management of Hybrid PCM and DRAM Memory

Characterizing Memory References for Smartphone Applications and Its Implications

“…This result contradicts the analysis of desktop applications, in which frequency is much stronger than temporal locality [7]. We cannot pinpoint the exact reason but it may be due to the read-intensive memory workload characteristics of smartphone environments.…”

“…This is different from memory references of desktop applications, in which a certain type of writeintensive applications exists [7]. ·Though smartphone memory references are readintensive, more than one half of memory footprints accounts for write references.…”

Dual Management of Real-Time and Interactive Jobs in Smartphones

“…First, we adopt high performance NVRAM such as PCM (phase-change memory) or STT-MRAM (spin torque transfer magnetic RAM) as the storage of real-time applications. Unlike flash memory, as its underlying structure does not require garbage collection but provides small and constant access latency, NVRAM ensures predictable I/O performance for real-time tasks [1], [2]. Second, we propose a dual purpose CPU scheduler, in which one core is exclusively used for a real-time job.…”

An optimal DRAM sizing and partitioning method for NVRAM based hybrid memory architecture

“…Phase change memory (PCM) is one of the most promising technologies for the NVRAM based memory system. However, PCM has write latencies roughly 6-10 times slower than that of DRAM [1,2]. Moreover, its lifetime is much shorter than DRAM due to the limited number of write operations allowed to each PCM cell [3].…”

“…The primary performance bottleneck in page replacement is the slow write speed of the NVRAM. Previous works mostly aim to develop efficient methods to map pages on DRAM and NVRAM [2].…”