Characterizing Plasma‐exposed In_0.52Al_0.48As Surface Using Photoreflectance‐, Raman‐, and Photoluminescence Spectra Method

Abstract

We have performed Photoreflectance (PR), Raman Scattering (RS), and Photoluminescence (PL) experiments to characterize the Ino.52Alo.48As surface exposed to plasma by a gas mixture of CHJHz/Ar, PR spectra indicate that RIE (plasma) causes defects such as nonradiative recombination centers, scattering centers, and defects leading to the decrease of signal intensity, broaden line width and red shift of the transitions by increasing the rf power. In the Raman scattering study, RIE causes defects against InAs-like and AIAs-like LO modes vibration. As the rf power increased, the maximum of two LO modes shifts towards lower frequency and the line shape becomes increasingly asymmetric. Also, the intensity degrades gradually by disorder and point defects with increasing rf power. The PL transition energies show a red-shift with increasing the rf power. In addition, the spectral feature broadens, and the intensity decreases with rf power higher than 200 w. The consistence of the PL, PR, and RS results indicate that these three methods can be used as sensitive probes to evaluate the near surface damage of the epilayer.