Characterizing the Igs(Vgs) Nonlinearity for Describing its Contribution to FET Large-signal Intermodulation Distortion

Garcia, Jose; Aballo, T.; Mediavilla, A.; Tazón, A.

doi:10.1109/inmmic.2006.283514

Cited by 1 publication

(1 citation statement)

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“…However, as for the GaN HEMT, the parasitic capacitance is usually small and the other nonlinear effects are relatively not obvious. Generally, the transconductance (g m ) is considered as the most main nonlinearity contributor in the GaN HEMT [31,32] . Therefore, we mainly focus on the physical mechanism of the nonlinear g m for the GaN HEMT in detail.…”

Section: Nonlinear Sources Of Gan Hemtsmentioning

confidence: 99%

A review on GaN HEMTs: nonlinear mechanisms and improvement methods

Du,

Ye,

Cai

et al. 2023

J. Semicond.

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The GaN HEMT is a potential candidate for RF applications due to the high frequency and large power handling capability. To ensure the quality of the communication signal, linearity is a key parameter during the system design. However, the GaN HEMT usually suffers from the nonlinearity problems induced by the nonlinear parasitic capacitance, transconductance, channel transconductance etc. Among them, the transconductance reduction is the main contributor for the nonlinearity and is mostly attributed to the scattering effect, the increasing resistance of access region, the self-heating effect and the trapping effects. Based on the mechanisms, device-level improvement methods of transconductance including the trapping suppression, the nanowire channel, the graded channel, the double channel, the transconductance compensation and the new material structures have been proposed recently. The features of each method are reviewed and compared to provide an overview perspective on the linearity of the GaN HEMT at the device level.

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Section: Nonlinear Sources Of Gan Hemtsmentioning

confidence: 99%