Characterizing the Two-Dimensional Doping Concentration inside Silicon-Nanowires Using Scanning Spreading Resistance Microscopy

Abstract

The characterization of doped regions inside silicon nanowire structures poses a challenge which must be overcome if these structures are to be incorporated into future electronic devices. Precise cross-sectioning of the nanowire along its longitudinal axis is required, followed by two-dimensional electrical measurements with nanometer spatial resolution. The authors have developed an approach to cross-section silicon nanowires and to characterize them by scanning spreading resistance microscopy (SSRM). This paper describes a cleaving-and polishing-based cross-sectioning method for silicon nanowires. High resolution SSRM measurements are demonstrated for epitaxially grown and etched silicon nanowires.