Charge Assisted Deposition of Polycrystalline Silicon Thin Films by Cesium Sputter Ion Beam Deposition

Room temperature deposition of crystalline indium tin oxide films by cesium-assisted magnetron sputtering

“…Because of the RF plasma distortion in the sputtering process, direct measurement of negative ions, as shown in our previous research [14], was so difficult that we calculate optimum cesium coverage on the target surface from a theoretical model. It was reported that the work function of the target surface can be minimized when the target surface is covered with a 0.6 monolayer (ML) of cesium [15].…”