Charge-based deep level transient spectroscopy of B-doped and undoped polycrystalline diamond films

Paprocki, K.; Fabisiak, K.; Bogdanowicz, Robert; Golunski, Lukasz; Staryga, E.; Szybowicz, Mirosław; Kowalska, Magdalena; Banaszak-Piechowska, Agnieszka

doi:10.1007/s10853-017-1217-0

Cited by 7 publications

(6 citation statements)

References 31 publications

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“…The obtained values of average hopping distance and small hopping energy W (Table 3) indicate that the conduction takes place by hopping between localized states in diamond grain interior which is in agreement with the earlier observation [17,30,31].…”

Section: Dc-conductivitysupporting

confidence: 91%

Electrical properties and Mott parameters of polycrystalline diamond films synthesized by HF CVD method from hydrogen/methanol gas mixture

Banaszak-Piechowska

Fabisiak

Staryga

et al. 2017

Materials Science-Poland

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The influence of diamond crystallinity and preferred orientation on electronic conductivity of synthetic diamond films grown by hot filament chemical vapor deposition (HFCVD) was investigated. The CVD diamond films of different morphologies and crystallite sizes varying from 36 nm to 67 nm, measured in h2 2 0i direction were considered. The charge transport mechanism in the diamond samples was studied using temperature dependent DC conductivity measurements. The obtained results showed that in the temperature range of 90 K to 300 K charge transport is realized via Variable Range Hopping (VRH, m = 1/4) mechanism. Using VRH model, the Mott parameters were evaluated i.e. density of states at Fermi level N(EF) (0.22 × 1015 eV-1·cm-3 to 1.7 × 1015 eV-1·cm-3), hopping energy W (43.5 meV to 142.3 meV) and average hopping distance R (1.49 × 10-5cm to 2.56 × 10-5cm). It was shown that above mentioned parameters strongly depend on diamond film preferential orientation.

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Section: Dc-conductivitysupporting

confidence: 91%

Electrical properties and Mott parameters of polycrystalline diamond films synthesized by HF CVD method from hydrogen/methanol gas mixture

Banaszak-Piechowska

Fabisiak

Staryga

et al. 2017

Materials Science-Poland

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“…On the other hand, and generally, increasing the chamber pressure favors the ⟨100⟩ textured morphology as well as the thickness of the diamond thin films, which is in very good agreement with previous studies. − It has been reported that boron doping leads to smaller crystallites, though it is not observed in this case, most probably due to increasing chamber pressure . We also believe that the presence of oxygen and argon in the system and their amount with increasing doping also plays an important role in the morphology, size, and quality of the doped thin films, as also previously reported in other works. , …”

Section: Resultssupporting

confidence: 92%

“…Though the doping trend is not immediately obvious or linear, it is certain that it takes place with a clear preference for the (200) orientation as indicated by the consistently strong texture coefficient (Table SI.1). 40,51,63 The intended doping extent was not achieved, which is in line with previous studies, which have indicated that boron is both substitutional and interstitial in the diamond framework. 30,31,64 One should also consider the increased amount of oxygen present in the system during HFCVD.…”

Section: Resultssupporting

confidence: 87%

“…45−50 It has been reported that boron doping leads to smaller crystallites, though it is not observed in this case, most probably due to increasing chamber pressure. 40 We also believe that the presence of oxygen and argon in the system and their amount with increasing doping also plays an important role in the morphology, size, and quality of the doped thin films, 51 as also previously reported in other works. 39,52 Observation of the cross-section of the samples by SEM (shown in the inset of figures) illustrates the columnar grained film growth, enabling determination of the different thin film growth rates, as illustrated in Table 1 and Figure 4.…”

Section: Resultssupporting

confidence: 78%

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Advances in RF Glow Discharge Optical Emission Spectrometry Characterization of Intrinsic and Boron-Doped Diamond Coatings

Sharma

Girão

Chapon

et al. 2022

ACS Appl. Mater. Interfaces

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Accurate determination of the effective doping range within diamond thin films is important for fine-tuning of electrical conductivity. Nevertheless, it is not easily attainable by the commonly adopted techniques. In this work, pulsed RF glow discharge optical emission spectrometry (GD-OES) combined with ultrafast sputtering (UFS) is applied for the first time to acquire elemental depth profiles of intrinsic diamond coatings and boron content bulk distribution in films. The GD-OES practical advances presented here enabled quick elemental profiling with noteworthy depth resolution and determination of the film interfaces. The erosion rates and layer thicknesses were measured using differential interferometric profiling (DIP), demonstrating a close correlation between the coating thickness and the carbon/hydrogen gas ratio. Moreover, DIP and the adopted semiquantification methodology revealed a nonhomogeneous bulk distribution of boron within the diamond crystalline structure, i.e., boron doping is both substitutional and interstitial within the diamond framework. DIP measurements also showed that effective boron doping is not linearly correlated to the increasing content introduced into the diamond coating. This is a finding well supported by X-ray diffraction (XRD) Rietveld refinement and X-ray photoelectron spectroscopy (XPS). This work demonstrates the advantage of applying advanced GD-OES operation modes due to its ease of use, affordability, accuracy, and high-speed depth profile analysis capability.

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“…The other important feature derived from the Raman spectrum is the level of hydrogen termination of the diamond surface [ 6 ]. This can be read from a luminescence background slope according to the empirically-derived equation [ 27 ]. Despite an apparent contrast between slopes, the calculated hydrogen concentration is equal for both samples.…”

Section: Resultsmentioning

confidence: 99%

The n–Si/p–CVD Diamond Heterojunction

et al. 2020

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Due to the possible applications, materials with a wide energy gap are becoming objects of interest for researchers and engineers. In this context, the polycrystalline diamond layers grown by CVD methods on silicon substrates seem to be a promising material for engineering sensing devices. The proper tuning of the deposition parameters allows us to develop the diamond layers with varying crystallinity and defect structure, as was shown by SEM and Raman spectroscopy investigations. The cathodoluminescence (CL) spectroscopy revealed defects located just in the middle of the energy gap of diamonds. The current–voltage–temperature, I−V−T characteristics performed in a broad temperature range of 77–500 K yielded useful information about the electrical conduction in this interesting material. The recorded I−V−T in the forward configuration of the n–Si/p–CVD diamond heterojunction indicated hopping trough defects as the primary mechanism limiting conduction properties. The Ohmic character of the carriers flux permitting throughout heterojunction is intensified by charges released from the depletion layer. The magnification amplitude depends on both the defect density and the probability that biasing voltage is higher than the potential barrier binding the charge. In the present work, a simple model is proposed that describes I−V−T characteristics in a wide range of voltage, even where the current saturation effect occurs.

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Charge-based deep level transient spectroscopy of B-doped and undoped polycrystalline diamond films

Cited by 7 publications

References 31 publications

Electrical properties and Mott parameters of polycrystalline diamond films synthesized by HF CVD method from hydrogen/methanol gas mixture

Electrical properties and Mott parameters of polycrystalline diamond films synthesized by HF CVD method from hydrogen/methanol gas mixture

Advances in RF Glow Discharge Optical Emission Spectrometry Characterization of Intrinsic and Boron-Doped Diamond Coatings

The n–Si/p–CVD Diamond Heterojunction

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