2008
DOI: 10.1016/j.cplett.2008.06.078
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Charge carrier dynamics in TiO2 nanoparticles at various temperatures

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Cited by 44 publications
(49 citation statements)
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“…This behavior has also been reported elsewhere, [17,39,45,46] and it has been attributed to the competition between electron trap filling and higher-order recombination. At such, it has been used as a signature for the presence of trap states in semiconductors (i.e., trap-assisted recombination).…”
Section: Resultsmentioning
confidence: 54%
“…This behavior has also been reported elsewhere, [17,39,45,46] and it has been attributed to the competition between electron trap filling and higher-order recombination. At such, it has been used as a signature for the presence of trap states in semiconductors (i.e., trap-assisted recombination).…”
Section: Resultsmentioning
confidence: 54%
“…This conductance is significantly suppressed upon lowering the temperature to 153 K, in clear contrast to pure TiO 2 , with mobilities in the range of 1 cm 2 V À1 s À1 nearly independent of temperature. 25,26 This difference suggests thermally activated hopping as the main mechanism for the charge transport due to the isolation of the Ti clusters by the organic linkers in the MOF. 27 Indeed, such clusters are too far apart to fulfil the Mott transition conditions, being approximately 4 Bohr radii.…”
mentioning
confidence: 99%
“…21 The decay profiles are similar to each other, except for the profile for ST01, in which the signal decays quickly. Although there are no clear explanations for the fast decay of the ST01 profile, one possible explanation is that electrons are trapped by structural defects in the particles.…”
Section: Decay Profile Of Trmc Signalmentioning
confidence: 69%