Charge-carrier lifetime in Hg1−x CdxTe (x=0.22) structures grown by molecular-beam epitaxy

Admittance of metal–insulator–semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy on GaAs substrates

“…The method of molecular-beam epitaxy (MBE) provides the possibility of growing HgCdTe films with a given thickness distribution of the CdTe content (composition x), which is used to optimize the performance of infrared detectors. Thus, creation of near-surface layers with high CdTe content reduces the influence of the surface recombination on the lifetime of charge carriers in the working layer of the semiconductor, and the formation of a pn-junction in the graded-gap region can reduce the series resistance of photodiodes [4,5]. To time, MBE has become the dominant vapor phase growth method for HgCdTe and resulting crystalline quality is comparable to liquid phase epitaxy [6,7].…”