Charge Carrier Production and Mobility in Anthracene Crystals

Kepler, R. G.

doi:10.1103/physrev.119.1226

Cited by 604 publications

(156 citation statements)

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“…The mobility values obtained using the equilibrium structure are within the range obtained from the various individual snapshots. We note that although our approach is not expected to provide absolute values of the mobility in these crystals, the magnitude of the calculated room-temperature electron mobility in ANT is in good agreement with experimental values [90][91][92].…”

Section: Charge Mobility Valuessupporting

confidence: 71%

Charge Transport in Organic Semiconductors: A Multiscale Modeling

Martinelli

Olivier

Muccioli

et al. 2011

Functional Supramolecular Architectures

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Section: Charge Mobility Valuessupporting

confidence: 71%

Charge Transport in Organic Semiconductors: A Multiscale Modeling

Martinelli

Olivier

Muccioli

et al. 2011

Functional Supramolecular Architectures

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“…The cells were set in a cryostat. The transient photocurrent was measured to determine the charge-carrier mobility by a conventional time-offlight setup, [26] and stored in a digital oscilloscope. parable to those of polycrystals of aromatic compounds.…”

mentioning

confidence: 99%

High Carrier Mobility up to 0.1 cm² V^–1 s^–1 at Ambient Temperatures in Thiophene‐Based Smectic Liquid Crystals

Funahashi¹,

2005

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plastics or metal foils. This is associated with the possibility of realizing efficient and reliable TFTs exhibiting high mobility, and opens new doors to so-called ªinvisible electronic circuitsº which will be highly important for the next generation of invisible and flexible electronics; e.g., as switching for addressing organic light-emitting matrices. ExperimentalThe ZnO films (doped and undoped) were deposited onto sodalime glass substrates by radiofrequency (rf, 13.56 MHz) magnetron sputtering using a ceramic-oxide target of ZnO from Super Conductor Materials Inc. with a purity of 99.99 % and 2 in (5.08 cm) in diameter. The sputtering was carried out at room temperature, and the argon deposition pressure was 0.15 Pa. The distance between the substrate and the target was 10 cm, and the rf power was changed between 50 W and 175 W. The deposition rate was varied between 15± 30 nm min ±1 . The film thickness was measured using a surface profilometer (Dektak 3 from Sloan Tech). Electrical resistivity was measured as a function of temperature in the range of 300±500 K using thermally evaporated aluminum electrodes in a coplanar configuration. X-ray diffraction measurements were performed at room temperature in air using the Cu Ka line (Rigaku DMAX III-C diffractometer). Surface morphologies were analyzed using a field-emission scanning electron microscope (Hitachi S-1400). The optical transmittance measurements were performed with a Shimadzu UV-vis 3100 PC double-beam spectrophotometer in the wavelength range from 200 nm to 2500 nm. Organic semiconductors were first utilized for the industrial fabrication of organic photoconductive coatings for xerographic photoreceptors (OPCs), [1] and have found recent application in organic light-emitting diodes (OLEDs).[2]Recently, increasing attention has been paid to organic fieldeffect transistors (OFETs).[3] For OPCs and OLEDs, thin films of amorphous organic semiconductors are used, which are characterized by a low carrier mobility, 10 ±6 to 10 ±3 times smaller than those of crystalline materials. [4] In the OFET applications, however, the amorphous materials are not available because the field-effect transistor requires a high mobility for fast switching or a high current density. Hence, polycrystalline materials, e.g., vacuum-evaporated pentacene, have been studied extensively for high mobility thin-film transistors (TFTs). In fact, a high mobility of up to 8 cm 2 V ±1 s ±1 has already been achieved. [5] In practical applications of polycrystalline materials, however, a new problem of ªgrain boundariesº that originates from molecular alignment in crystalline materials, and which is not the case in amorphous materials, emerges: the grain boundaries cause electrically active localized states and spoil long-term stability by adsorbing ambient contaminants. Therefore, its control is a key issue in realizing practical applications of polycrystalline materials. On the other hand, there is an approach that avoids this boundary effect. In the last ten years, it has been rev...

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“…Los descubrimientos realizados independientemente por Kepler [8] y LeBlanc [9] referentes a la movilidad de electrones y huecos en monocristales de antraceno, hace cerca de 40 años, constituyeron un paso decisivo en la introducción de los materiales orgánicos a esferas técnicas reservadas casi exclusivamente a los semiconductores inorgánicos, la electrónica y fotónica. 1 Dr. Docente investigador de la Facultad de Ciencias de la Universidad Nacional de Ingeniería, 2 Alumno del Laboratorio de Óptica de la Facultad de Ciencias de la Universidad Nacional de Ingeniería, 3 Alumno del Laboratorio de Óptica de la Facultad de Ciencias de la Universidad Nacional de Ingeniería.…”

Section: Introductionunclassified