Charge collection in irradiated HV-CMOS detectors

Hiti, B.; Affolder, A.; Arndt, K.; Bates, R. L.; Benoit, M.; Bello, F. Di; Blue, A.; Bortoletto, D.; Buckland, Matthew Daniel; Buttar, C. M.; Caragiulo, P.; Das, D.; Doering, D.; Dopke, J.; Dragone, A.; Ehrler, F.; Fadeyev, V.; Fedorko, W.; Galloway, Z.; Grabas, H. M. X.; Gregor, I. M.; Grenier, P.; Grillo, A.A.; Han, Yanling; Hoeferkamp, M. R.; Hommels, L. B. A. H.; Huffman, T. B.; John, J.; Kanisauskas, K.; Kenney, C. J.; Kramberger, G.; Liang, Z.; Mandić, I.; Maneuski, D.; Martinez-McKinney, F.; McMahon, S.; Meng, L.; Mikuž, M.; Muenstermann, D.; Nickerson, R. B.; Perić, I.; Phillips, P. W.; Plackett, R.; Rubbo, F.; Ruckman, L.; Segal, J.; Seidel, S. C.; Seiden, A.; Shipsey, I. P. J.; Song, W. M.; Stanitzki, M. M.; Su, D.; Tamma, C.; Turchetta, R.; Vigani, L.; Volk, J.; Wang, R.; Warren, M.; Wilson, F. F.; Worm, S. D.; Xiu, Q. L.; Zhang, J.; Zhu, H.

doi:10.1016/j.nima.2018.07.022

Cited by 14 publications

(11 citation statements)

References 18 publications

(23 reference statements)

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“…For LGAD sensors the removal coefficient was extracted from measurements of the gain layer depletion voltage as function of fluence (see section 3). Data taken from [8,9,10,11,12,13] for CMOS sensors and from [14,16] for LGADs.…”

Section: Pos(vertex2019)027mentioning

confidence: 99%

Acceptor removal - Displacement damage effects involving the shallow acceptor doping of p-type silicon devices

Moll¹

2020

Proceedings of the 28th International Workshop on Vertex Detectors — PoS(Vertex2019)

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New sensor technologies are under development to cope with the ever increasing requirements for high energy physics (HEP) detectors. For the High-Luminosity LHC (HL-LHC) and the Future Circular Collider (FCC) higher radiation hardness, improved timing performance and lower cost large area detector technologies are essential. Recent developments of p-type silicon planar sensors, sensors with intrinsic gain for timing applications and monolithic sensors are examples for next generation detector technologies. A commonality of these new sensors is the use of boron doped p-type silicon, while present HEP sensors are essentially based on n-type silicon. Consequently, radiation effects in p-type silicon have been less studied in the detector community, but are now of high relevance. In this paper, we review radiation effects in p-type silicon devices with a focus on acceptor removal effects. In p-type silicon exposure to radiation causes an apparent deactivation of the dopant. This socalled acceptor removal effect is for example evidenced by an initial decrease of depletion voltage in p-type sensors with rising particle fluence, while after exposure to higher fluences the device behavior is dominated by other radiation induced effects. Low Gain Avalanche Detectors (LGADs) are the baseline technology for future solid-state timing layers at the HL-LHC. Their good timing performance is based on the intrinsic amplification of the signal by impact ionization in a highly doped p-type gain layer. Radiation effects reduce the active boron concentration in the gain layer and lead to a reduction in field strength and consequently a loss of intrinsic signal amplification, thus limiting the radiation hardness of this technology. Monolithic detectors, especially High Voltage CMOS, are another technology affected by acceptor removal, as the bulk silicon used for the sensor is typically of p-type. We review the impact of radiation damage on the depleted volume as function of the initial boron concentration and the corresponding change in signal charge and device performance. The origin of the radiation induced deactivation of the boron acceptor is found in the creation of defects that contain boron, that is consequently no longer acting as shallow dopant. Defect spectroscopy techniques like Thermally Stimulated Currents (TSC) and Deep Level Transient Spectroscopy (DLTS) allow detecting these levels, help to understand the defect formation kinetics on the microscopic level and open the door to defect engineering approaches to mitigate the acceptor removal effect. Latest results of the CERN RD50 collaboration in this research field are reviewed.

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Section: Pos(vertex2019)027mentioning

confidence: 99%

Acceptor removal - Displacement damage effects involving the shallow acceptor doping of p-type silicon devices

Moll¹

2020

Proceedings of the 28th International Workshop on Vertex Detectors — PoS(Vertex2019)

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“…After irradiation to low fluences, the depletion depth gradually increases due to initial acceptor removal effects. This phenomenon is commonly observed in silicon sensors with relatively low resistivity substrates [9]. After irradiation to higher fluences, the depletion depth decreases due to radiation induced deep acceptors.…”

Section: Experimental Evaluation Of Rd50-mpw1mentioning

confidence: 69%

Recent depleted CMOS developments within the CERN-RD50 framework

Figueras¹

2020

Proceedings of the 28th International Workshop on Vertex Detectors — PoS(Vertex2019)

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Depleted CMOS sensors are groundbreaking position sensitive detectors that offer a competitive and cost-effective solution for a large range of particle tracking applications. In spite of their substantial advantages, these sensors require further research to become even more performant and meet the ever more demanding requirements of particle physics experiments planned for the near future. In this context, the CERN-RD50 collaboration has started a new R&D programme to study and develop depleted CMOS sensors as one of its main priorities. This article presents the depleted CMOS R&D programme within the CERN-RD50 collaboration. It describes the design aspects of the two prototype ASICs developed so far, which are in a 150 nm High Voltage-CMOS (HV-CMOS) process and manufactured on high resistivity substrates. The first prototype ASIC, named RD50-MPW1 and delivered after fabrication in April 2018, integrates a matrix of 50 μm x 50 μm pixels with all the analogue and digital readout electronics for column drain readout embedded in their sensing areas. The second prototype ASIC, named RD50-MPW2 and delivered after fabrication in January 2020, integrates a matrix of 60 μm x 60 μm pixels with analogue readout electronics to reduce the sensor response time. RD50-MPW2 incorporates new methods to optimise the leakage current of the sensor. The article discusses laboratory measurements of the performance evaluation of RD50-MPW1, while those of RD50-MPW2 will be published elsewhere.

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“…At the time given, it appears that the eect of acceptor removal and acceptor generation is qualitatively present in various p-doped materials. However, the precise removal and generation rates seem dependent to some extend on the details of the material and the radiation source (protons/neutrons) [37,38]. This is subject of ongoing research.…”

Section: Non-ionizing Radiation Damagementioning

confidence: 99%

On the radiation tolerance of CMOS Monolithic Active Pixel Sensors with partially depleted active volume

Deveaux¹

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CMOS Monolithic Active Pixel Sensors for charged particle tracking (CPS) form are ultra-light and highly granular silicon pixel detectors suited for highly sensitive charged particle tracking. Unlike to most other silicon radiation detectors, they rely on standard CMOS technology. This cost efficient approach allows for building particularly small and thin pixels but also introduced, until recently, substantially constraints on the design of the sensors. The most important among them is the missing compatibility with the use of PMOS transistors and depleted charge collection diodes in the pixel. Traditional CPS were thus first of all suited for vertex detectors of relativistic heavy ion and particle physics experiments, which require highest tracking accuracy in combination with moderate time resolution and radiation tolerance. This work reviews the R&D on understanding and improving the radiation tolerance of traditional CPS with non- and partially depleted active medium as pioneered by the MIMOSA-series developed by the IPHC Strasbourg. It introduces the specific measurement methods used to assess the radiation tolerance of those non-standard pixels. Moreover, it discusses the major mechanisms of radiation damage and procedures for radiation hardening, which allowed to extend the radiation tolerance of the devices by more than an order of magnitude.

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Charge collection in irradiated HV-CMOS detectors

Cited by 14 publications

References 18 publications

Acceptor removal - Displacement damage effects involving the shallow acceptor doping of p-type silicon devices

Acceptor removal - Displacement damage effects involving the shallow acceptor doping of p-type silicon devices

Recent depleted CMOS developments within the CERN-RD50 framework

On the radiation tolerance of CMOS Monolithic Active Pixel Sensors with partially depleted active volume

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