Charge Control in Schottky-Type p-GaN Gate HEMTs With Partially and Fully Depleted p-GaN Conditions

Wu, Qianshu; Chen, Jia; He, Liang; Jinwei, Zhang; Qiu, Qiuling; Feng, Chenliang; Li, Liuan; Que, Taotao; Liu, Zhenxing; Wu, Zhisheng; He, Zhiyuan; Liu, Yang

doi:10.1109/ted.2021.3130848

Cited by 5 publications

(2 citation statements)

References 24 publications

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“…After H 2 treatment, the normalized values change to 1.3 × 10 −5 mA mm −1 and 2.2 × 10 −1 mA mm −1 , respectively. The p-GaN gate structure can be modeled as backto-back series-connected metal/p-GaN Schottky barrier diode (D SBD ) and p-GaN/AlGaN/GaN diode (D pin ) [22,23]. As a result, during on-state, the I gs is determined by the reverse-bias D SBD .…”

Section: Resultsmentioning

confidence: 99%

“…After H 2 treatment, the hole concentration in p-GaN decreases by 15%, while the mobility changed slightly, with a decrease of 3%. The decrease in hole concentration indicates that hydrogen migrated into p-GaN and passivated the activated Mg, which directly resulted in the negative drift of V th for the p-gate AlGaN/GaN HEMT [23,24]. In order to explore the influence of H 2 treatment on the p-GaN layer, SIMS measurements and temperature-dependent PL measurements were carried out.…”

Section: Resultsmentioning

confidence: 99%

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Effect of hydrogen poisoning on p-gate AlGaN/GaN HEMTs

He,

Jiang

et al. 2024

J. Phys. D: Appl. Phys.

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In this work, we investigate the degradation behavior and mechanism of p-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) for the first time under hydrogen (H2) atmosphere. The experimental results reveal significant decrease in drain-to-source current, negative drift in threshold voltage, increase in off-state gate leakage current, and deterioration of subthreshold swing in the p-gate AlGaN/GaN HEMT after H2 treatment. The degradation of the electrical parameters is considered to hydrogen poisoning phenomenon. Through secondary ion mass spectrometry and variable temperature photoluminescence spectroscopy, we observe the increase in hydrogen concentration in the p-GaN layer and the formation of electrically inactive Mg-H complexes after H2 treatment. As results, the effective hole concentration decreases and the trap density of the device increases, which are confirmed by Hall effect measurement and low-frequency noise analysis, respectively. The detrimental effect of hydrogen on p-gate AlGaN/GaN HEMTs can be attributed primarily to the compensation of Mg doping and the generation of defects.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%