2014
DOI: 10.1063/1.4870507
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Charge control of antiferromagnetism at PbZr0.52Ti0.48O3/La0.67Sr0.33MnO3 interface

Abstract: Enhanced magnetoelectric effect in La0.67Sr0.33MnO3/PbZr0.52Ti0.48O3 multiferroic nanocomposite films with a SrRuO3 buffer layer

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Cited by 28 publications
(30 citation statements)
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“…However, in the present study, we describe the overall behaviour of the system, focusing on the major factors controlling this behaviour, and we have not attempted to isolate every mechanism at work. Collectively, these results suggest a magnetic phase transition at the LSMO/PZT interface, in agreement with other studies 14,63,64 . We find that the local ferroelectric polarization differs at each interface, which affects the magnitude of the charge-transfer screening effect in each LSMO layer.…”
Section: Discussionsupporting
confidence: 82%
“…However, in the present study, we describe the overall behaviour of the system, focusing on the major factors controlling this behaviour, and we have not attempted to isolate every mechanism at work. Collectively, these results suggest a magnetic phase transition at the LSMO/PZT interface, in agreement with other studies 14,63,64 . We find that the local ferroelectric polarization differs at each interface, which affects the magnitude of the charge-transfer screening effect in each LSMO layer.…”
Section: Discussionsupporting
confidence: 82%
“…22,23 We have recently demonstrated the TER with large resistance ratios (up to 100:1) in heterostructures which mainly depends on the active device area. 24 The effect of magnetic fields on TER was also observed and was much greater with applied in-plane magnetic field.…”
mentioning
confidence: 99%
“…1,2 In previous studies, ferroelectric field effect has been successfully utilized to modulate the electronic and magnetic properties of high-T c superconductors, [3][4][5] colossal magnetoresistive oxides, [6][7][8][9][10][11][12][13][14] and various Mott insulators. [15][16][17] This device concept also provides a viable route for building high density, low power, complex oxide-based logic and memory applications.…”
mentioning
confidence: 99%