Charge-Coupling Effect in a Hall Field Element Based on Thin-Film Soi-Mos Transistor

Abstract

The Article shows that the effect of charge coupling between the gates of SOI MOS field-effect transistors is also observed in double-gate transistor magnetosensitive Hall-type elements with a silicon film thickness of about 200 nm. It has been determined that in such sensitive elements operating in the electron enrichment mode near the Si-SiO2 interfaces, the effect of charge coupling makes it possible to increase the magnetic sensitivity.