2019
DOI: 10.1021/acsami.9b14919
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Charge Coupling Enhanced Photocatalytic Activity of BaTiO3/MoO3 Heterostructures

Abstract: In this work, we proposed an efficient heterostructure photocatalyst by integrating the ferroelectric BaTiO3 (BTO) layer with the semiconductor MoO3 layer, availing the ferroelectric polarization of BaTiO3 and high generation of photoinduced charge carriers in the MoO3 layer. The effect of MoO3 layer thickness (t MoO3 ) on the photocatalytic efficiency of the BTO/MoO3 heterostructures is found to be optimum at t MoO3 = 67 nm as t MoO3 varies from 40 to 800 nm. The BTO/MoO3 heterostructure with t MoO3 = 67 n… Show more

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Cited by 74 publications
(36 citation statements)
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“…In an attempt to intuitively confirm the generation of Generally, the generation of •O 2 − and •OH active species has close relation with the CB edge (i.e., E CB ) and VB edge (i.e., E VB ) of semiconductor. As previously proposed, the E CB and E VB values of a special semiconductor can be achieved with the aid of following functions: [50,51] = − + E X E E 0.5 VB e g…”
Section: Resultsmentioning
confidence: 99%
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“…In an attempt to intuitively confirm the generation of Generally, the generation of •O 2 − and •OH active species has close relation with the CB edge (i.e., E CB ) and VB edge (i.e., E VB ) of semiconductor. As previously proposed, the E CB and E VB values of a special semiconductor can be achieved with the aid of following functions: [50,51] = − + E X E E 0.5 VB e g…”
Section: Resultsmentioning
confidence: 99%
“…Generally, the generation of •O 2 − and •OH active species has close relation with the CB edge (i.e., E CB ) and VB edge (i.e., E VB ) of semiconductor. As previously proposed, the E CB and E VB values of a special semiconductor can be achieved with the aid of following functions: [50,51] www.advmatinterfaces.de herein, these parameters including X and E e are the absolute electronegativity of semiconductor and the energy of free electrons on the hydrogen scale with a fixed values of 4.5 eV, respectively. As for BiOF, the values of X and E g are 7.…”
Section: Wwwadvmatinterfacesdementioning
confidence: 99%
“…In an attempt to theoretically explain the production of • OH and • O 2 – species, the following empirical expressions are employed to estimate the edges of the conduction band ( i.e ., E CB ) and valence band ( i.e ., E VB ) of the developed compounds , where X refers to the absolute electronegativity of the semiconductor, E e , which equals to 4.5 eV, belongs to the energy of free electrons on the hydrogen scale. In terms of BiOI, its X value is 5.94, and E g equals to 1.75 eV.…”
Section: Results and Discussionmentioning
confidence: 99%
“…As it is well-known, ferroelectrics possess a unique property of spontaneous polarization due to a non-centrosymmetric crystal structure. A spontaneous polarization-induced electric field attributed to intrinsic dipoles in ferroelectrics can act as a driving force for promoting photoexcited charge carriers to direct transport through the material and thus suppress their recombination. For a single component ferroelectric photocatalyst, the spontaneous polarization-induced electric field can force photoexcited electrons and holes moving in opposite directions, leading to effective separation and rapid transport of charge carriers from the bulk to the surface of the ferroelectric photocatalyst, thus enhancing photocatalytic performance. In a ferroelectric-semiconductor heterojunction photocatalyst, charge carrier separation and transport both in the bulk and the interface can be promoted by the spontaneous polarization-induced electric field resulting in enhancement of photocatalysis. BaTiO 3 nanocrystals have recently received great attention because of their excellent room-temperature ferroelectricity even in a dimension down to ∼5 nm and comparatively good photocatalytic activities . Yang et al reported a large enhancement of photoelectrochemical performance from 5 nm BaTiO 3 -coated TiO 2 nanowires, compared to the pristine TiO 2 nanowires.…”
Section: Introductionmentioning
confidence: 99%