Charge density wave modulation in superconducting 
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 superlattices

Harris, Douglas W.; Campbell, Neil; Chen, Di; Park, Joong Mok; Luo, Liang; Zhou, Hua; Kim, G.-Y.; Song, Kyung; Choi, Si‐Young; Wang, J.; Rzchowski, M. S.; Eom, C. B.

doi:10.1103/physrevb.101.064509

Cited by 5 publications

(2 citation statements)

References 28 publications

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“…In particular, a large mismatch between BaBiO 3 and SrTiO 3 would cause relaxation; indeed, BaBiO 3 films grown on SrTiO 3 (001) are fully relaxed while the films on MgO (100) are strained. It is mentioned in passing that Inumaru et al claimed a partial suppression of the OT modes for BaBiO 3 films grown on MgO substrates [13], and, in contrast, local breathing and tilting distortions were reported even for superconducting Ba 1−x K x BiO 3 and BaPb 1−x Bi x O 3 films on SrTiO 3 substrates [22].…”

Section: Raman Scattering Measurementsmentioning

confidence: 99%

Raman modes and dielectric relaxation properties of epitaxial BaBiO₃ thin films

Talha

Lee

2020

Mater. Res. Express

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Perovskite BaBiO 3 films are grown on MgO (100) substrate and SrTiO 3 (001) and (110) substrates using pulsed laser deposition. The thickness of the films ranges from ∼10 nm up to 200 nm. X-ray diffraction and reciprocal space mapping show that the thin films are grown epitaxially but relaxed considerably particularly for the films on SrTiO 3 . The topography of the film surfaces are obtained with AFM and found to be atomically flat with the step and terrace structure of unit cell step height. Raman spectroscopy is performed on the BaBiO 3 films in the temperature range from 50 K to 300 K. The phonon modes related to octahedral breathing, bond bending, and bond stretching are detected in the Raman spectra, and the distinctive features are found in the phonon modes below and above a structural transition around 140 K. Out-of-plane dielectric measurements are also carried out from 10 K to 400 K for the films on SrTiO 3 with different orientations. In particular, the dielectric measurements demonstrate frequency as well as orientation dependent anisotropic dielectric relaxation behaviors in BaBiO 3 films.

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Section: Raman Scattering Measurementsmentioning

confidence: 99%

Raman modes and dielectric relaxation properties of epitaxial BaBiO₃ thin films

Talha

Lee

2020

Mater. Res. Express

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“…First principles calculations has also predicted a topological insulator state in doped BaBiO 3 surface [134], showing the possibility for complex phases to exist in this system. Research on this system involving thin films and heterostructures is still ongoing [135,136] and new insights on the interplay of strong spin-orbit coupling, superconductivity and symmetry breaking have been found. It should be pointed out that one challenge in the growth and heterostructuring of the bismuthates also lies in the charge disproportionation of Bi.…”

Section: Non Transition Metal Oxidesmentioning

confidence: 99%

Advances in complex oxide quantum materials through new approaches to molecular beam epitaxy

Rimal,

Comes

2024

J. Phys. D: Appl. Phys.

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Molecular beam epitaxy (MBE), a workhorse of the semiconductor industry, has progressed rapidly in the last few decades in the development of novel materials. Recent developments in condensed matter and materials physics have seen the rise of many novel quantum materials that require ultra-clean and high-quality samples for fundamental studies and applications. Novel oxide-based quantum materials synthesized using MBE have advanced the development of the field and materials. In this review, we discuss the recent progress in new MBE techniques that have enabled synthesis of complex oxides that exhibit "quantum" phenomena, including superconductivity and topological electronic states. We show how these techniques have produced breakthroughs in the synthesis of 4d and 5d oxide films and heterostructures that are of particular interest as quantum materials. These new techniques in MBE offer a bright future for the synthesis of ultra-high quality oxide quantum materials.

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Low-temperature grapho-epitaxial La-substituted BiFeO3 on metallic perovskite

Husain,

Harris,

Gao

et al. 2024

Nat Commun

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Bismuth ferrite has garnered considerable attention as a promising candidate for magnetoelectric spin-orbit coupled logic-in-memory. As model systems, epitaxial BiFeO3 thin films have typically been deposited at relatively high temperatures (650–800 °C), higher than allowed for direct integration with silicon-CMOS platforms. Here, we circumvent this problem by growing lanthanum-substituted BiFeO3 at 450 °C (which is reasonably compatible with silicon-CMOS integration) on epitaxial BaPb0.75Bi0.25O3 electrodes. Notwithstanding the large lattice mismatch between the La-BiFeO3, BaPb0.75Bi0.25O3, and SrTiO3 (001) substrates, all the layers in the heterostructures are well ordered with a [001] texture. Polarization mapping using atomic resolution STEM imaging and vector mapping established the short-range polarization ordering in the low temperature grown La-BiFeO3. Current-voltage, pulsed-switching, fatigue, and retention measurements follow the characteristic behavior of high-temperature grown La-BiFeO3, where SrRuO3 typically serves as the metallic electrode. These results provide a possible route for realizing epitaxial multiferroics on complex-oxide buffer layers at low temperatures and opens the door for potential silicon-CMOS integration.

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Charge density wave modulation in superconducting BaPbO3/BaBiO3 superlattices

Cited by 5 publications

References 28 publications

Raman modes and dielectric relaxation properties of epitaxial BaBiO₃ thin films

Raman modes and dielectric relaxation properties of epitaxial BaBiO₃ thin films

Advances in complex oxide quantum materials through new approaches to molecular beam epitaxy

Low-temperature grapho-epitaxial La-substituted BiFeO3 on metallic perovskite

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Charge density wave modulation in superconducting BaPbO3/BaBiO3 superlattices

Cited by 5 publications

References 28 publications

Raman modes and dielectric relaxation properties of epitaxial BaBiO3 thin films

Raman modes and dielectric relaxation properties of epitaxial BaBiO3 thin films

Advances in complex oxide quantum materials through new approaches to molecular beam epitaxy

Low-temperature grapho-epitaxial La-substituted BiFeO3 on metallic perovskite

Contact Info

Product

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Raman modes and dielectric relaxation properties of epitaxial BaBiO₃ thin films

Raman modes and dielectric relaxation properties of epitaxial BaBiO₃ thin films