Herein, we calculated reorganization energies, vertical ionization energies, electron affinities, and HOMO–LUMO gaps of fused thiophenes and their derivatives, and analyzed the influence of different substituents on their electronic properties. Furthermore, we simulated the angular resolution anisotropic mobility for both electron‐ and hole‐transport, based on quantum‐chemical calculations combined with the Marcus–Hush electron‐transfer theory. We showed that: 1) styrene‐group substitution can effectively elevate the HOMO energy level and lower the LUMO energy level, and therefore lower both the hole‐ and electron‐injection barriers; and 2) chemical oxidation of the thiophene ring can significantly improve the semiconductor properties of the fused oligothiophenes through a decrease of the injection barrier and an increase in the charge‐transfer mobility for electrons but without lowering their hole‐transfer mobilities, which suggests that it may be a promising way to convert p‐type semiconductors into ambipolar or n‐type semiconductor materials.