Charge-noise spectroscopy of Si/SiGe quantum dots via dynamically-decoupled exchange oscillations

Connors, Elliot J.; Nelson, J. K.; Edge, L. F.; Nichol, John

doi:10.1038/s41467-022-28519-x

Cited by 67 publications

(37 citation statements)

References 56 publications

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“…The charge noise shows a standard deviation of 0.27 μeV/√Hz with the average of 0.61 μeV/√Hz and several points lower than 0.1 μeV/√Hz. This is the state-of-the-art low charge noise for MOS devices 8,[32][33][34] , and comparable to SiGe heterostructures 28,29,31,51 .…”

Section: Charge Noisementioning

confidence: 90%

“…To study the device noise, we focus on the SET charge noise as it has been shown to well represent the qubit noise , and typically the noise figure at 1 Hz is used as the metric to benchmark between different structures and material platforms [28][29][30] . On the flank of the Coulomb peak, where the SET is the most sensitive to environmental noise, we record the current noise spectrum.…”

Section: Charge Noisementioning

confidence: 99%

“…Though there are several exciting demonstrations of qubits made by advanced industrial fabrication with good yield and transport uniformity, the final qubit performance typically shows a certain level of degradation over that of lab devices [6][7][8] . Device charge noise, which is one of the limiting factors for spin coherence and an important metric characterizing the device quality at cryogenic temperatures 19,[28][29][30][31][32] , is typically high in fab structures 8,33,34 .…”

Section: Introductionmentioning

confidence: 99%

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Low charge noise quantum dots with industrial CMOS manufacturing

Elsayed¹,

Shehata²,

Kubicek³

et al. 2022

Preprint

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Silicon spin qubits are among the most promising candidates for large scale quantum computers, due to their excellent coherence and compatibility with CMOS technology for upscaling. Advanced industrial CMOS process flows allow wafer-scale uniformity and high device yield, but off the shelf transistor processes cannot be directly transferred to qubit structures due to the different designs and operation conditions. To therefore leverage the know-how of the micro-electronics industry, we customize a 300mm wafer fabrication line for silicon MOS qubit integration. With careful optimization and engineering of the MOS gate stack, we report stable and uniform quantum dot operation at the Si/SiOx interface at milli-Kelvin temperature. We extract the charge noise in different devices and under various operation conditions, demonstrating a record-low average noise level of 0.61 μeV/√Hz at 1 Hz and even below 0.1 μeV/√Hz for some devices and operating conditions. By statistical analysis of the charge noise with different operation and device parameters, we show that the noise source can indeed be well described by a two-level fluctuator model. This reproducible low noise level, in combination with uniform operation of our quantum dots, marks CMOS manufactured MOS spin qubits as a mature and highly scalable platform for high fidelity qubits.

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Section: Charge Noisementioning

confidence: 90%

Section: Charge Noisementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Low charge noise quantum dots with industrial CMOS manufacturing

Elsayed¹,

Shehata²,

Kubicek³

et al. 2022

Preprint

View full text Add to dashboard Cite

show abstract

“…Multi-qubit gate fidelities are mainly limited by charge noise though, which causes fluctuations in the voltage [3,4,[53][54][55][56][57][58]. As a result, the exchange strength, J, fluctuates in the presence of charge noise because it depends on the voltage.…”

Section: Smooth Pulses Using Dynamical Invariantsmentioning

confidence: 99%

Non-adiabatic quantum control of quantum dot arrays with fixed exchange using Cartan decomposition

Kanaar

Güngördü

Kestner

2022

Phil. Trans. R. Soc. A.

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In semiconductor spin qubits which typically interact through short-range exchange coupling, shuttling of spin is a practical way to generate quantum operations between distant qubits. Although the exchange is often tunable through voltages applied to gate electrodes, its minimal value can be significantly large, which hinders the applicability of existing shuttling protocols to such devices, requiring a different approach. In this work, we extend our previous results for double- and triple-dot systems, and describe a method for implementing spin state transfer in long chains of singly occupied quantum dots in a non-adiabatic manner. We make use of Cartan decomposition to break down the interacting problem into simpler problems in a systematic way, and use dynamical invariants to design smooth non-adiabatic pulses that can be implemented in devices with modest control bandwidth. Finally, we discuss the extensibility of our results to directed shuttling of spin states on two-dimensional lattices of quantum dots with fixed coupling. This article is part of the theme issue ‘Shortcuts to adiabaticity: theoretical, experimental and interdisciplinary perspectives’.

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“…The SET spectroscopy data is valuable in understanding the amplitude of the electrical noise present in the system, by probing directly the charge fluctuations via the SET, and will be useful especially for probing low frequency charge noise [52]. It is also a fast measurement that can be used as a benchmarking tool for noise in qubit systems, without performing a full qubit noise spectroscopy [53]. Although it is not capable of probing noise in the high frequency regime, the results from the studies here indicate that extrapolating the low frequency results to higher frequencies is consistent with the qubit coherence results, and therefore remains a useful predictive tool.…”

Section: (C) (Purple Trace)mentioning

confidence: 99%

Control of dephasing in spin qubits during coherent transport in silicon

Feng¹,

Yoneda²,

Huang³

et al. 2022

Preprint

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One of the key pathways towards scalability of spin-based quantum computing systems lies in achieving long-range interactions between electrons and increasing their inter-connectivity. Coherent spin transport is one of the most promising strategies to achieve this architectural advantage. Experimental results have previously demonstrated high fidelity transportation of spin qubits between two quantum dots in silicon and identified possible sources of error. In this theoretical study, we investigate these errors and analyze the impact of tunnel coupling, magnetic field and spin-orbit effects on the spin transfer process. The interplay between these effects gives rise to double dot configurations that include regimes of enhanced decoherence that should be avoided for quantum information processing. These conclusions permit us to extrapolate previous experimental conclusions and rationalize the future design of large scale quantum processors.

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Charge-noise spectroscopy of Si/SiGe quantum dots via dynamically-decoupled exchange oscillations

Cited by 67 publications

References 56 publications

Low charge noise quantum dots with industrial CMOS manufacturing

Low charge noise quantum dots with industrial CMOS manufacturing

Non-adiabatic quantum control of quantum dot arrays with fixed exchange using Cartan decomposition

Control of dephasing in spin qubits during coherent transport in silicon

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