2014
DOI: 10.1063/1.4901162
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Charge noise, spin-orbit coupling, and dephasing of single-spin qubits

Abstract: Quantum dot quantum computing architectures rely on systems in which inversion symmetry is broken, and spin-orbit coupling is present, causing even single-spin qubits to be susceptible to charge noise. We derive an effective Hamiltonian for the combined action of noise and spin-orbit coupling on a single-spin qubit, identify the mechanisms behind dephasing, and estimate the free induction decay dephasing times T * 2 for common materials such as Si and GaAs. Dephasing is driven by noise matrix elements that cau… Show more

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Cited by 56 publications
(42 citation statements)
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References 78 publications
(99 reference statements)
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“…From this simple power-law spectrum, we obtain   1  2.01 and   1  , both of which agree well with the independent fitting results to the ACPMG envelopes and the T2 CPMG scaling described above. Such 1/f charge noise has commonly been observed in electrical properties in semiconductor devices [8][9][10] and is also measured as current fluctuations in our device ( Supplementary Fig. 1).…”
supporting
confidence: 70%
“…From this simple power-law spectrum, we obtain   1  2.01 and   1  , both of which agree well with the independent fitting results to the ACPMG envelopes and the T2 CPMG scaling described above. Such 1/f charge noise has commonly been observed in electrical properties in semiconductor devices [8][9][10] and is also measured as current fluctuations in our device ( Supplementary Fig. 1).…”
supporting
confidence: 70%
“…[2]), hints that the fluctuations of B dc in the superconducting magnet coils may not be the cause of 1/f 2.5 noise seen in the quantum dot and Si:P donor qubit systems at low frequency. At frequencies f = 2-20 kHz, our qubit noise follows the exponent of α = -0.8--1, resembling the nature of 1/f charge noise [6,[30][31][32][33]. The red (blue) dashed line is a plot of the function C 2 /ω (C 3 /ω 0.8 ), with C 2 = 3 × 10 7 (C 3 = 4 × 10 6 ).…”
mentioning
confidence: 74%
“…The dephasing rate is given by (T * 2 ) −1 = (δω) 2 τ S /2, where δ ω is the qubit energy shift when the trap is charged, and τ S is the switching time [36]. Together with its image in the gate, a dipole e d is created, resulting in a dipole potential…”
Section: Dephasing From Electric Field Fluctuationsmentioning
confidence: 99%
“…We also find that dephasing from Johnsonlimited gate voltage noise, and from two-level (tunneling) systems (TLS), are ∼ 10 7 and ∼ 10 4 times weaker, respectively, compared with RTS. [36] There are only a few spin resonance experiments on acceptors [58,[76][77][78][79][80][81], none of which feature strain and an interface. [50] We expect hyperfine-induced decoherence in nat Si to be weak since it has only 4.7 % of spin-bearing isotopes and hyperfine interactions are weaker for holes than electrons.…”
mentioning
confidence: 99%