Charge order and antiferromagnetism in epitaxial ultrathin films of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>EuNiO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math>

Meyers, D.; Middey, S.; Kareev, M.; Liu, Jian; Kim, Jong Woo; Shafer, Padraic; Ryan, Philip; Chakhalian, Jak

doi:10.1103/physrevb.92.235126

Cited by 20 publications

(17 citation statements)

References 49 publications

(80 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This result clearly demonstrates how a heterostructured film enables interface engineering of oxygen octahedral rotation pattern. As reported previously, highly strained ENO exhibits octahedral breathing, which is related to monoclinic distortion [29]. This corresponds to a doubling of the unit cell, and therefore allows the (-½ ½ ½) reflection ((0 1 1) in orthorhombic notation) which is forbidden in orthorhombic symmetry.…”

supporting

confidence: 54%

Direct Evidence of the Competing Nature between Electronic and Lattice Breathing Order in Rare-Earth Nickelates

et al. 2020

Self Cite

View full text Add to dashboard Cite

Correlated electrons give rise to both exotic electronic and magnetic properties in rare-earth nickelates.Here we present evidence of the interfacial coupling between two nickelate systems EuNiO 3 (ENO) and LaNiO 3 (LNO) with different electronic and magnetic properties but with compatible structural registry giving rise to an electrostructural transition, unobserved in each constituent. Nominally, LNO remains in a paramagnetic-metallic 3 phase while orthorhombic ENO undergoes antiferromagnetic and insulating transitions. However, the ENO/LNO heterostructure displays a uniform rotational symmetry set by an entwined interface. This leads to an anomalous reduction of bond disproportionation in the ENO layer through the metal to insulator transition and concomitantly charge disproportionation (CD) opens the gap accompanied by antiferromagnetic ordering. Our results resolve a long-standing question in the physics of rare-earth nickelates, herein demonstrating that charge and bond disproportionation are competing mechanisms for the charge localization process in the rare-earth nickelate system.

show abstract

supporting

confidence: 54%

Direct Evidence of the Competing Nature between Electronic and Lattice Breathing Order in Rare-Earth Nickelates

et al. 2020

Self Cite

View full text Add to dashboard Cite

show abstract

“…These findings imply that the ultra thin films have stabilized a previously unknown nickelate ground state consisting of an insulating orthorhombic phase with AFM order. However, ultra thin films of the more strongly distorted EuNiO 3 on NGO substrates displayed bulk-like CO, suggesting this anomalous state occupies only a narrow band of phase space 61 . Intriguingly, as observed here, the case of a phase transition without a structural symmetry change can only be first order and is exceptionally rare in complex materials, with the most prominent examples being analogous to the liquid-gas transformation 51 62 .…”

Section: Probing Lattice Symmetry and Charge Orderingmentioning

confidence: 99%

Pure electronic metal-insulator transition at the interface of complex oxides

Meyers

Liu

Freeland

et al. 2016

Sci Rep

Self Cite

View full text Add to dashboard Cite

In complex materials observed electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge, and magnetic order parameters frequently obscures the underlying physics. Here, we demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO3 in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and long-range charge order parameter. These findings illustrate the utility of heterointerfaces as a powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to an exceptionally rare purely electronic metal-insulator transition with no symmetry change.

show abstract

mentioning

confidence: 99%

“…Phase separation has been recently reported in ultrathin films. [25] Conflicting evidence for the presence of charge ordering [26][27][28][29] and the role of electronic vs. magnetic correlations [28,30] point to the intricate nature of this transition (see for example [31] and references therein).In typical T-driven MIT measurements, the temperature is ramped up from low to high temperatures, driving the system from an insulating to a metallic phase. To observe the memory effect, we perform a series of resistance vs. temperature (R-T) measurements, where we interrupt the usual temperature rise with a reversal of the ramp from heating to cooling at a specific temperature, TH, which lies within the transition region.…”

mentioning

confidence: 99%

Ramp‐Reversal Memory and Phase‐Boundary Scarring in Transition Metal Oxides

et al. 2017

View full text Add to dashboard Cite

Transition metal oxides (TMOs) are complex electronic systems which exhibit a multitude of collective phenomena. Two archetypal examples are VO2 and NdNiO3, which undergo a metal-insulator phase-transition (MIT), the origin of which is still under debate. Here we report the discovery of a memory effect in both systems, manifest through an increase of resistance at a specific temperature, which is set by reversing the temperature-ramp from heating to cooling during the MIT. The characteristics of this ramp-reversal memory effect do not coincide with any previously reported history or memory effects in manganites, electronglass or magnetic systems. From a broad range of experimental features, supported by theoretical modelling, we find that the main ingredients for the effect to arise are the spatial Submitted to 22222222224222 phase-separation of metallic and insulating regions during the MIT and the coupling of lattice strain to the local critical temperature of the phase transition. We conclude that the emergent memory effect originates from phase boundaries at the reversal-temperature leaving "scars" in the underlying lattice structure, giving rise to a local increase in the transition temperature.The universality and robustness of the effect shed new light on the MIT in complex oxides.TMOs are a hallmark example of complex electron systems; the competition between charge, spin, strain, lattice, oxidation and other degrees of freedom, having similar energy scales, give rise to numerous collective phenomena [1][2][3] including superconductivity, [4] colossal magnetoresistance [5] and metal-insulator transitions (MIT). [6] In many thin film TMOs which exhibit a temperature (T)-driven phase transition, complexity is manifest through the coexistence of multiple phases where a single phase is expected, [7][8][9][10][11] providing the setting required for emergent phenomena to develop.[1]An intriguing feature found in many of the systems that exhibit the aforementioned phenomena, is the appearance of internal memory, where the system's properties (e.g. resistance or magnetization) depend on the measurement history. Such memory effects appear in various forms and measurement settings, having very different microscopic origins, many of which are still poorly understood. Examples include dynamical memory and slow relaxation in electron-glass systems such as amorphous oxides, [12,13] spatially phase-separated memory in colossal-magnetoresistance manganites, [14] shape-memory in martensitic alloys, [15] and more. [16,17] Here we report the appearance of an unexpected memory effect within the MIT in two prototypical examples of complex TMOs, namely VO2 and NdNiO3 (NNO). The characteristics of the observed effect differ substantially from those of previously reported memory effects, indicating a different microscopic origin.VO2 and NNO both exhibit an MIT, however its features and microscopic origin are quite different. In VO2 the MIT occurs above room temperature, ~340 K, and is accompanied by a structural transition from...

show abstract

Charge order and antiferromagnetism in epitaxial ultrathin films ofEuNiO3

Cited by 20 publications

References 49 publications

Direct Evidence of the Competing Nature between Electronic and Lattice Breathing Order in Rare-Earth Nickelates

Direct Evidence of the Competing Nature between Electronic and Lattice Breathing Order in Rare-Earth Nickelates

Pure electronic metal-insulator transition at the interface of complex oxides

Ramp‐Reversal Memory and Phase‐Boundary Scarring in Transition Metal Oxides

Contact Info

Product

Resources

About