2019
DOI: 10.1088/1742-6596/1199/1/012009
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Charge properties and stability of 2D silicon carbide

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Cited by 1 publication
(2 citation statements)
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“…116 For AA 0 stacking the bond length increases to 0.184 nm and the interlayer separation reduces to 0.221 nm, in agreement with the results described above. 116 The increasing focus of attention on silagraphene (SiC) originates from a wide spectrum of optoelectronic properties and highly anisotropic transport properties. Therefore, SiC layers are of particular interest for commercial applications as light-emitting diodes (LEDs) and in photovoltaic devices.…”
Section: View Article Onlinesupporting
confidence: 90%
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“…116 For AA 0 stacking the bond length increases to 0.184 nm and the interlayer separation reduces to 0.221 nm, in agreement with the results described above. 116 The increasing focus of attention on silagraphene (SiC) originates from a wide spectrum of optoelectronic properties and highly anisotropic transport properties. Therefore, SiC layers are of particular interest for commercial applications as light-emitting diodes (LEDs) and in photovoltaic devices.…”
Section: View Article Onlinesupporting
confidence: 90%
“…Table 4 provides the cohesive energies and structural data of the planar group IV carbides SiC, [112][113][114][115][116][117] GeC, 115,[118][119][120] and SnC 115,121,122 and the buckled monolayers SiGe, 115,123,124,128 SnSi, 115,122,125,126 and SnGe. 115,122,125,126 The dependence of the cohesive energy on bond length of these binary compounds is displayed in Fig.…”
Section: View Article Onlinementioning
confidence: 99%