Charge sensing and spin-related transport property of p-channel silicon quantum dots

Yamaoka, Yu; Iwasaki, Kazuma; Oda, Shunri; Kodera, Tetsuo

doi:10.7567/jjap.56.04ck07

Cited by 22 publications

(32 citation statements)

References 43 publications

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“…( 3) ). A dot radius of 27 nm is smaller than previous silicon MOS hole quantum dots operating in the few hole regime 22 , 23 , 37 . The expected orbital spacing for a 2D artificial atom with 27 nm radius is ~3 meV (see Supplementary Note 6 and Supplementary Eq.…”

Section: Resultsmentioning

confidence: 74%

“…However, creating a planar silicon CMOS quantum dot capable of confining a single hole has been a challenge 21 – 24 . Previous studies of planar silicon-based hole quantum dots have used transport measurements to study the addition spectrum of the quantum dot 21 – 23 . However, as these devices approach the few hole regime, the tunnel barriers become extremely opaque, and the transport signal falls precipitously.…”

Section: Introductionmentioning

confidence: 99%

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Spin and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot

Liles

Yang

et al. 2018

Nat Commun

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Valence band holes confined in silicon quantum dots are attracting significant attention for use as spin qubits. However, experimental studies of single-hole spins have been hindered by challenges in fabrication and stability of devices capable of confining a single hole. To fully utilize hole spins as qubits, it is crucial to have a detailed understanding of the spin and orbital states. Here we show a planar silicon metal-oxide-semiconductor-based quantum dot device and demonstrate operation down to the last hole. Magneto-spectroscopy studies show magic number shell filling consistent with the Fock–Darwin states of a circular two-dimensional quantum dot, with the spin filling sequence of the first six holes consistent with Hund’s rule. Next, we use pulse-bias spectroscopy to determine that the orbital spectrum is heavily influenced by the strong hole–hole interactions. These results provide a path towards scalable silicon hole-spin qubits.

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Section: Resultsmentioning

confidence: 74%

Section: Introductionmentioning

confidence: 99%

Spin and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot

Liles

Yang

et al. 2018

Nat Commun

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show abstract

“…All devices were fabricated from an undoped 40-nm-thick silicon-on-insulator (SOI) with a 145-nm-thick buried oxide. Quantum dot structures and the side gate were then formed by etching the silicon active layer at selected regions using inductive coupled plasma reactive ion etching (ICP-RIE) 31 , 37 – 39 . However, in these experiments the side gate was not used.…”

Section: Methodsmentioning

confidence: 99%

4.2 K sensitivity-tunable radio frequency reflectometry of a physically defined p-channel silicon quantum dot

Buğu

Nishiyama

Kato

et al. 2021

Sci Rep

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We demonstrate the measurement of p-channel silicon-on-insulator quantum dots at liquid helium temperatures by using a radio frequency (rf) reflectometry circuit comprising of two independently tunable GaAs varactors. This arrangement allows observing Coulomb diamonds at 4.2 K under nearly best matching condition and optimal signal-to-noise ratio. We also discuss the rf leakage induced by the presence of the large top gate in MOS nanostructures and its consequence on the efficiency of rf-reflectometry. These results open the way to fast and sensitive readout in multi-gate architectures, including multi qubit platforms.

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“…The interaction between phonon and magnon such as spinwave, 1) magnetic resonance, 2) spin current, 3) spin relaxation, 4) and so on, has attracted great attention. In particular, recent lithography techniques enable us to excite GHz-range surface acoustic waves (SAWs), whose frequencies can be matched to those of the ferromagnetic resonance (FMR).…”

Section: Introductionmentioning

confidence: 99%

The angular dependence of magnetization dynamics induced by a GHz range strain pulse

Tojo,

Nagakubo,

Ogi

2022

Preprint

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The dynamics of magnetization is important in spintronics, where the coupling between phonon and magnon attracts much attention. In this work, we study the angular dependence of the coupling between longitudinal-wave phonon and magnon. We investigated the magnetization dynamics using the time-resolved magneto-optical Kerr effect, which allows measuring spin-wave resonances and the magnetic echo signal. The frequency, mode number, and amplitude of the spin-wave resonance change with the out-of-plane angle of the external magnetic field. The amplitude of the magnetic echo signal caused by the strain pulse also changes with the angle. We calculate these angular dependences based on the Landau-Lifshitz-Gilbert equation and find that the angles of the external field and magnetic moment are important factors for the phonon-magnon coupling when phonon propagates in the thickness direction under the out-of-plane magnetic field.

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Charge sensing and spin-related transport property of p-channel silicon quantum dots

Cited by 22 publications

References 43 publications

Spin and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot

Spin and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot

4.2 K sensitivity-tunable radio frequency reflectometry of a physically defined p-channel silicon quantum dot

The angular dependence of magnetization dynamics induced by a GHz range strain pulse

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