The influence of various effects inherent to the high-energy ion
bombardment of crystals on the latent
track formation is treated. The nature of tracks is dependent on a
type of solids. The relaxation of strong
electron excitation which occurs under irradiation of materials by
energetic ions is the main parameter
which defines the nature of track regions. The track migration of
implanted atoms as well as track
channeling of incident ions is discussed for ion implantation in
semiconductors.