Charge storage and interface states effects in Si-nanocrystal memory obtained using low-energy Si+ implantation and annealing

Abstract

Thin SiO2 oxides implanted by very-low-energy (1 keV) Si ions and subsequently annealed are explored with regards to their potential as active elements of memory devices. Charge storage effects as a function of Si fluence are investigated through capacitance and channel current measurements. Capacitance–voltage and source–drain current versus gate voltage characteristics of devices implanted with a dose of 1×1016 cm−2 or lower exhibit clear hysteresis characteristics at low electric field. The observed fluence dependence of the device electrical properties is interpreted in terms of the implanted oxide structure.

Recent progress in gold nanoparticle-based non-volatile memory devices

“…However, floating-gate based flash memory has been reported to have limits in continuous device scaling due to increasing cell-to-cell interference, decreasing coupling ratio, non-scalable tunnelling oxide thickness, decreasing tolerance for charge loss, etc. Therefore, active research has been performed on flash memory devices with discrete charge trapping layers, such as silicon-oxide-nitride-oxide-silicon (SONOS) devices [29][30][31][32][33]25] or nanocrystal (NC)-based memory devices (nano-floating gate memory devices) [34][35][36][37][38]. Because of their better endurance, smaller chip size, and lower power consumption when compared with floating-gate devices, this technology is of great interest to the electronics industry.…”

High total dose tolerance of prototype silicon nanocrystal non-volatile memory cells

“…2) Low-Energy Si Implantation: This method involves Si ion implantation into a bare oxide layer on Si substrates [6], [7], which produces a Si excess in the oxide. Subsequent high-temperature annealing drives the and Si phase separation.…”

Structure and Properties of Nanoparticles Formed by Ion Implantation

“…These crystal shapes have also been investigated by Monte Carlo simulations [53]. Size distributions are narrower than for compound nanocrystals formed by ion implantation, and can be further narrowed (or involve the formation of platelet structures) by using low-energy implants, as has been done for silicon-nanocrystal-based nonvolatile memory devices [54,55].…”