Charge storage characteristics of gold nanoparticles embedded in alumina matrix

Abstract

The processes of charge accumulation in the nonvolatile memory metal-oxidesilicon capacitors with gold nanoparticles floating gate formed by the pulsed laser deposition method are investigated. The regularities of formation of alumina films with gold nanoparticles are the result of their deposition from the back flow of low-energy particles from the erosion torch. With removing from the torch axis, sizes of gold particles and the film thickness decreased. When recording the capacitance-voltage curves, the capture of a negative charge was observed. It was shown that the concentration of gold nanoparticles in alumina matrix and the thickness of nanocomposite films remarkably influenced on the stored charge. The observed flat band voltage shift was in the range 1 to 14 V. To explain the peculiarities of charge storage in the composite films, the electron transport through them was investigated.

Negative Capacitance and Dielectric Constant of Nanocomposite SiAlzOxNy(Si) Films with Semiconductor Nanoparticles

“…Such behavior of C – U characteristics is caused by existence of the significant conductivity of the SiAl z O x N y (Si) films under investigation. Previously, we observed similar behavior of C – U characteristics in the case of nanocomposite films containing Si nanoclusters in a SiO 2 matrix and Au nanoclusters in an Al 2 O 3 matrix …”

“…Previously, we observed similar behavior of C−U characteristics in the case of nanocomposite films containing Si nanoclusters in a SiO 2 matrix 29 and Au nanoclusters in an Al 2 O 3 matrix. 30 The frequency dependence of the capacitance at fixed voltage of U = −6 V is presented in Figure 5. As can be seen in Figures 4 and 5, the negative capacitance is revealed at the frequency of 2 kHz.…”