The ligands that passivate the surfaces of semiconductor nanocrystals play an important role in excited state relaxation and charge transfer. Replacement of native long-chain organic ligands with chalcogenides has been shown to improve charge transfer in nanocrystal-based devices. In this report, we examine how surface-capping with S 2-, Se 2-, and Te 2-impacts the excited state relaxation in CdSe quantum dots (QDs). We use transient absorption spectroscopy with state-specific pumping to reveal the kinetics of electron and hole cooling, band edge electron relaxation, hole trapping, and trapped hole relaxation, all as a function of surface-capping ligand. We find that carrier cooling is not strongly dependent on the ligand. In contrast, band edge relaxation exhibits strong ligand dependence, with enhanced electron trapping in chalcogenide-capped QDs. This effect is the weakest with the S 2-ligand, but is very strong with and Se 2-and Te 2-, such that the average band edge electron lifetimes for QDs capped with those ligands are under 100 ps. We conclude that, unlike the case of S 2-, improvements in electron transfer rates with Se 2-and Te 2-ligands may be overshadowed by the extreme electron lifetime shortening that may lead to low quantum yields of electron transfer.