Charge transfer dynamics of electrochemical dark and photoprocesses on semiconductors Part I: Manifold of stationarity conditions of hydrogen reaction emerging from dark to photoregimes of n-materials, and dark admittance evaluation

Lorenz, W.; Handschuh, M.; Bergmann, Fedor

doi:10.1016/s0301-0104(96)00338-2

Cited by 6 publications

(1 citation statement)

References 26 publications

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“…For the specific case where a change in applied potential is dropped across the space charge layer, the Marcus−Gerischer model may be used to determine the rate constants. ,,,− This analysis can only be performed, however, if the following conditions are satisfied: (i) the surface electron concentration can be calculated from analysis of the position of the band edges in deep depletion (e.g., Mott−Schottky analysis), (ii) the energy of the redox couple is such that the current−potential curves can be analyzed in weak depletion (usually at least 200−300 mV from the flat band potential), (iii) the density of surface states is sufficiently low, and (iv) the surface is stable in the solution.…”

Section: Current−potential Curvesmentioning

confidence: 99%

The Potential Distribution at the Semiconductor/Solution Interface

1998

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In semiconductor electrochemistry there is considerable confusion concerning the potential distribution at the semiconductor/solution interface under weak depletion and accumulation conditions. The applied potential is partitioned between the space charge layer in the semiconductor and the Helmholtz layer on the solution side of the interface. Under deep depletion conditions, a change in the applied potential usually appears across the space charge layer and the band bending can be determined using the Mott-Schottky relation. Under conditions of weak depletion or accumulation, however, the applied potential is partitioned between the two double layers and determination of band bending is not straightforward. In this paper, expressions for the dependence of the band bending on the applied potential are derived and the consequences for chargetransfer processes are discussed.

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