Charge transfer efficiency in proton damaged CCD's

Abstract-P-channel, backside illuminated silicon CCDs were developed and fabricated on high-resistivity n-type silicon. Devices have been exposed up to 1 × 10 11 protons/cm 2 at 12 MeV. The charge transfer efficiency and dark curent were measured as a function of radiation dose. These CCDs were found to be significantly more radiation tolerant than conventional n-channel devices. This could prove to be a major benefit for long duration space missions.

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“…Two good examples are reference [10] and [11]. Unfortunately the proton energies chosen are very different.…”

Section: Comparison With Conventional Devicesmentioning

confidence: 99%

Proton radiation damage in p-channel CCDs fabricated on high-resistivity silicon

Bebek

Groom

Holland

et al. 2002

IEEE Trans. Nucl. Sci.

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“…These types of damage are generally collectively referred to as surface damage. The second is displacement damage within the bulk silicon which causes the transfer problems in CCDs [2] …”

Section: Total Ionizing Dose Effects In Mos Transistorsmentioning

confidence: 99%

“…is that, unlike CCDs [2], they do not suffer charge transfer problems induced by DD and are theoretically less susceptible to various TID induced effects due to the use of thinner gate oxide layers in modern CMOS manufacturing processes [3]. CIS are therefore being explored for missions such as JUICE and others.…”

mentioning

confidence: 99%

Total ionizing dose effects on I-V and noise characteristics of MOS transistors in a 0.18 μm CMOS Image Sensor process

Greig

Stefanov

Holland

et al. 2013

2013 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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Abstract-This paper presents an investigation into total ionizing dose (TID) effects on I-V and noise characteristics of MOS transistors manufactured in a 0.18 µm CMOS Image Sensor (CIS) process. The CIS are intended for use in space science missions experiencing harsh radiation environments, such as ESA's forthcoming JUICE mission. Devices were therefore irradiated to various TID levels up to 1 Mrad. Following irradiation, significant leakage current and threshold voltage modification was observed, and this was found to be more severe for devices with small channel geometries. Noise spectral density measurements were also performed at the different irradiation steps. Noise in the smaller geometry devices was found to increase following irradiation, whereas for larger devices it was not significantly affected. These findings enable future assessment of the effects of TID on functional and electro-optical characteristics of high performance CIS designs for use in space. Index Terms-CMOS image sensor (CIS), metal oxide semiconductor (MOS) transistor, total ionizing dose (TID).

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“…ShockleyRead-Hall theory (e.g., Hardy et al 1998) and knowledge gained from Gaia testing. The first iteration of such a CDM was proposed by Lindegren (2008), however, his model is not based on physical theory and was always intended as a place-holder.…”

Section: Background To the Modelmentioning

confidence: 99%

“…These radiation-induced traps dramatically increase the CTI of the detector and raise the radiation issue to being missioncritical in the absence of adequate mitigation. For further discussion of radiation-induced CTI see Hardy et al (1998);Janesick (2001).…”

Section: Introductionmentioning

confidence: 99%

An analytical model of radiation-induced Charge Transfer Inefficiency for CCD detectors

Short

Crowley

Bruijne

et al. 2013

Monthly Notices of the Royal Astronomical Society

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The European Space Agency's Gaia mission is scheduled for launch in 2013. It will operate at L2 for 5 years, rotating slowly to scan the sky so that its two optical telescopes will repeatedly observe more than one billion stars. The resulting data set will be iteratively reduced to solve for the position, parallax and proper motion of every observed star. The focal plane contains 106 large area silicon CCDs continuously operating in a mode where the line transfer rate and the satellite rotation are in synchronisation.One of the greatest challenges facing the mission is radiation damage to the CCDs which will cause charge deferral and image shape distortion. This is particularly important because of the extreme accuracy requirements of the mission. Despite steps taken at hardware level to minimise the effects of radiation, the residual distortion will need to be calibrated during the pipeline data processing. Due to the volume and inhomogeneity of data involved, this requires a model which describes the effects of the radiation damage which is physically realistic, yet fast enough to implement in the pipeline. The resulting charge distortion model was developed specifically for the Gaia CCD operating mode. However, a generalised version is presented in this paper and this has already been applied in a broader context, for example to investigate the impact of radiation damage on the Euclid dark-energy mission data.

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Charge transfer efficiency in proton damaged CCD's

Cited by 71 publications

References 18 publications

Proton radiation damage in p-channel CCDs fabricated on high-resistivity silicon

Proton radiation damage in p-channel CCDs fabricated on high-resistivity silicon

Total ionizing dose effects on I-V and noise characteristics of MOS transistors in a 0.18 μm CMOS Image Sensor process

An analytical model of radiation-induced Charge Transfer Inefficiency for CCD detectors

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Charge transfer efficiency in proton damaged CCD's

Cited by 71 publications

References 18 publications

Proton radiation damage in p-channel CCDs fabricated on high-resistivity silicon

Proton radiation damage in p-channel CCDs fabricated on high-resistivity silicon

Total ionizing dose effects on I-V and noise characteristics of MOS transistors in a 0.18 &#x03BC;m CMOS Image Sensor process

An analytical model of radiation-induced Charge Transfer Inefficiency for CCD detectors

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Total ionizing dose effects on I-V and noise characteristics of MOS transistors in a 0.18 μm CMOS Image Sensor process