Forming
an interface dipole moment pointing from the
absorber to
the oxide substrate can improve the open-circuit voltage (V
OC) of perovskite solar cells (PSCs) without
affecting photocurrent. In past studies, however, interface dipole
layers were generally formed using organic self-assembled monolayers
or polyelectrolytes, which raises concerns about intrinsic stability.
Meanwhile, perovskites’ substrate-dependent electronic properties
question the apparent correlation between the oxide’s work
function and the built-in voltage. In this work, we propose an interface
dipole layer based on solution-processable metal halides, which increases
the built-in voltage of the n–i–p diode by simultaneously
reducing the electron transport layer’s work function and strengthening
the n-type characteristics of the perovskite absorber. The n–i–p-structured
PSCs with the SbX3 dipole layer achieve substantially enhanced V
OC (1.171 V) and power conversion efficiency
(23.11%). Further experiments and calculations confirm that the proposed
dipole model can explain the V
OC enhancement
qualitatively and quantitatively.