2022
DOI: 10.1016/j.orgel.2021.106363
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Charge-transfer pentacene/benzothiadiazole derivative cocrystal for UV-to-NIR Large Range Responsive Phototransistors

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Cited by 8 publications
(8 citation statements)
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“…S 1 d and S 3 ), which is the best result among the organic UV-sensitive phototransistors (Fig. 1g , Table S1 ) 29 , 32 43 . Although the enhancement of P value under 1600 nW cm −2 illumination was observed, the devices with buffer layer showed a weak detection ability of ultraweak UV light compared with bare SiO 2 dielectric layer (Fig.…”
Section: Resultsmentioning
confidence: 85%
See 1 more Smart Citation
“…S 1 d and S 3 ), which is the best result among the organic UV-sensitive phototransistors (Fig. 1g , Table S1 ) 29 , 32 43 . Although the enhancement of P value under 1600 nW cm −2 illumination was observed, the devices with buffer layer showed a weak detection ability of ultraweak UV light compared with bare SiO 2 dielectric layer (Fig.…”
Section: Resultsmentioning
confidence: 85%
“…More importantly, the fabricated devices could even detect the UV light intensity as low as 31 nW cm −2 , which was the lowest detectable intensity in organic UV-sensitive phototransistors (Fig. 1f , Table S1 ) 29 , 32 43 . By calculating the P based on the ratio of photogenerated current to the dark current under a certain light intensity 44 , the maximum value of P could reach 1.2 × 10 4 under 370 nm wavelength illumination at 1600 nW cm −2 light intensity (Fig.…”
Section: Resultsmentioning
confidence: 99%
“…As shown in Figure S2, the offstate current decreased from 10 -10 to 10 -12 A and the on-state current was accordingly increased with the aid of the modified layer. As a result, it was found that under the density of 1600 nW cm -2 , the value of P increased by at least one order of magnitude and the best value could reach to 8×10 5 (Figure S1d and S3), which is the best result among the organic UV-sensitive phototransistors (Figure 1g) 27,[30][31][32][33][34][35][36][37][38][39][40][41] . Although the enhancement of P value under 1600 nW cm -2 illumination was observed, the devices with buffer layer showed a weak detection ability of ultraweak UV-light compared that with bare SiO2 dielectric layer (Figure 2a and S4).…”
Section: Resultsmentioning
confidence: 96%
“…Positive photoresponse were observed with the obvious response discrimination at each illumination density. More importantly, the fabricated devices could even detect the UV-light intensity as low as 31 nW cm -2 , which was the lowest detectable intensity in UV-sensitive phototransistors (Figure 1f) 27,[30][31][32][33][34][35][36][37][38][39][40][41] . By calculating the photosensitivity (P) based on the ratio of photogenerated current to the dark current under a certain light intensity 42 , the maximum value of P could reach 1.2×10 4 under 370 nm wavelength illumination at 1600 nW cm -2 light intensity (Figure S1a).…”
Section: Resultsmentioning
confidence: 99%
“…2 In the cocrystals, the highest occupied molecular orbital (HOMO) of D molecules and the lowest unoccupied molecular orbital (LUMO) of A molecules generate delocalization, which allows electron transition from D to A. 3 The electron transport is formed in a whole network of cocrystals, which makes them possess excellent electrical properties and be applied for photodetection, 4 phototransistors, 5 and organic field effect transistors. 6 A tunable organic semiconductor bandgap endows the cocrystals with novel and various optical properties, for instance, tunable light emission, 7 optical waveguides, 8 room temperature phosphorescence, 9 stimuli-responsive behaviors, 10 etc.…”
Section: Introductionmentioning
confidence: 99%