Charge transient spectroscopy

Farmer, J. W.; Lamp, C. D.; Meese, J. M.

doi:10.1063/1.93401

Cited by 79 publications

(28 citation statements)

References 6 publications

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“…The second term is the time-dependent current density integrated and collected as a Q-transient using a CSP. Collecting the signal as a charge and not as current transient improves the SNR for long time constants [46]. Equation (18) must be integrated and multiplied by the cross-sectional area A d of the trapped volume of charge to obtain the Q-transient.…”

Section: Model For Emission Charge Transientmentioning

confidence: 99%

Metal-Doped Oxide Electrodes for Transparent Thin-Film Transistors Fabricated by Direct Co-Sputtering Method

Cheong¹,

Shin²,

Byun³

et al. 2009

jjap

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Theoretical aspects of a new technique for the MeV ion microbeam are described in detail for the first time. The basis of the technique, termed scanning ion deep level transient spectroscopy (SIDLTS), is the imaging of defect distributions within semiconductor devices. The principles of SIDLTS are similar to those behind other deep level transient spectroscopy (DLTS) techniques with the main difference stemming from the injection of carriers into traps using the localized energy-loss of a focused MeV ion beam. Energy-loss of an MeV ion generates an electron-hole pair plasma, providing the equivalent of a DLTS trap filling pulse with a duration which depends on space-charge screening of the applied electric field and ambipolar erosion of the plasma for short ranging ions. Some nanoseconds later, the detrapping current transient is monitored as a charge transient. Scanning the beam in conjunction with transient analysis allows the imaging of defect levels. As with DLTS, the temperature dependence of the transient can be used to extract trap activation levels. In this, the first of a two-part paper, we introduce the various stages of corner capture and derive a simple expression for the observed charge transient. The second paper will illustrate the technique on a MeV ion implanted Au-Si Schottky junction.

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Section: Model For Emission Charge Transientmentioning

confidence: 99%

Metal-Doped Oxide Electrodes for Transparent Thin-Film Transistors Fabricated by Direct Co-Sputtering Method

Cheong¹,

Shin²,

Byun³

et al. 2009

jjap

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“…Actually for obtaining a peak on the time scale t i it is sufficient to combine and weight two sampled values only, as demonstrated by Kirov and Radev [35] and Farmer et al [36]. This is the technique utilized by Gaudin et al [32].…”

Section: Charge Transient Spectroscopy (Qts)mentioning

confidence: 99%

Anomalous charge relaxation in channels of pentacene‐based organic field‐effect transistors: a charge transient spectroscopy study

Thurzo

Paez

Méndez

et al. 2006

Physica Status Solidi (a)

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Two types of Si/SiO2/pentacene organic field‐effect transistors (OFET) with bottom Au‐source (S) and – drain (D) electrodes were examined by charge transient spectroscopy (QTS), applying pulsed bias ΔU DS to the channel of an OFET with floating gate electrode. The transient charge Q (t ), flowing through the channel after the removal of the bias pulse, was processed at a constant temperature by a three‐channel correlator yielding the signal ΔQ = Q (t 1) – 3/2Q (2t 1) + 1/2Q (4t 1), the scanned delay t1 being related to the trailing edge of the bias pulse. Most of the QTS spectra were characterized by peaks of ΔQ (t 1) with FWHM corresponding to discrete time constants τ m ≈ t 1m, while scanning t 1 from 2 μs to 0.1 s. The common feature of the QTS spectra was a linear dependence of the peak height ΔQ m on ΔU DS for both polarities of the latter, thereby resembling what is expected for dielectric relaxation (polarization). Some devices showed anomalous (reversed) sign of the signal with respect to the polarity of ΔU DS, or even features like transitions from the correct sign to the reversed one. In order to customize the anomalies, a model is presented which ignores injection of excess charge carriers and takes into account two contributions to the total transient charge: a/space charge of intrinsic charge carriers piled up at the blocking Au‐electrodes during the pulse, relaxing with the dielectric relaxation time τ D = ϵ 0ϵ r/σ (σ being conductivity of the organics); b/orientation of molecular dipoles (τ dip) in the relaxing electric field of the space charge. It is the dipolar component that is responsible for the anomalous charge flow direction manifested by the signal reversal. The origin of the permanent dipole moment of the otherwise non‐polar pentacene molecules may be either attached excess or missing atoms (vacancies) of the defect molecules [J. E. Northrup and M. L. Chabinyc, Phys. Rev. B 68, 041202 (2003)]. In cases of non‐blocking contacts the dipolar relaxation would lead to QTS peaks of correct sign, to be distinguished from possibly non‐negligible contribution of the dielectric relaxation in the semiconductor. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…These requirements impose a number of limitations to the applicability of C-DLTS, so that other forms of space-charge spectroscopic techniques, such as charge-based DLTS ͑Q-DLTS͒, are preferred in a number of situations, including the study of wide band-gap materials with relatively deep donor or acceptor states. [12][13][14][15] In this study, we use a form of Q-DLTS, 12,13,16 -19 to probe trap states within P-doped homoepitaxial diamond. The specificity of the measurements made here lie in the fact that a Q-DLTS signal, originating from the P-related donor level itself, is expected.…”

Section: Introductionmentioning

confidence: 99%

Charge-based deep level transient spectroscopy of phosphorous-doped homoepitaxial diamond

Gaudin

Troupis

Jackman

et al. 2003

Journal of Applied Physics

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Articles you may be interested inPhotoinduced current transient spectroscopy of deep levels and transport mechanisms in iron-doped GaN thin films grown by low pressure-metalorganic vapor phase epitaxy Memory effects related to deep levels in metal-oxide-semiconductor structure with nanocrystalline Si A form of charge-based deep level transient spectroscopy ͑Q-DLTS͒ has been used to investigate electrically active defects within three phosphorus ͑P͒-doped, n-type, homoepitaxial diamond films, grown by the chemical vapor deposition technique, in an attempt to obtain a Q-DLTS signal related to the P-donor level itself. Four distinct peaks were observed in the Q-DLTS spectra, two of which could be fully analyzed. One of the other two peaks overlapped other structures in the measured spectra and so could not be fully characterized, while the fourth emerged at temperatures corresponding to the limit of the experimental system used. The two fully characterized peaks arose through the presence of levels with activation energies within the range 0.42-0.6 eV depending on the sample, contact scheme, and charging time used. One of these two peaks was only observed within two of the three samples. It occurred as a shoulder on the left-hand side of a more prominent and sharp Q-DLTS feature. Both of these Q-DLTS peaks are thought to originate from the P-related donor level in diamond, although their Q-DLTS activation energy values appeared to be scattered and most of the time significantly shallower than the value of 0.6 eV corresponding to the ground level of the P-related donor level. Such discrepancies are thought to arise essentially from retrapping effects, likely due to strong leakage currents at the metal/diamond interface. Improvements to the accuracy of the measurements made here is therefore expected if reliable, good quality, Schottky contacts to n-type diamond become obtainable.

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Charge transient spectroscopy

Cited by 79 publications

References 6 publications

Metal-Doped Oxide Electrodes for Transparent Thin-Film Transistors Fabricated by Direct Co-Sputtering Method

Metal-Doped Oxide Electrodes for Transparent Thin-Film Transistors Fabricated by Direct Co-Sputtering Method

Anomalous charge relaxation in channels of pentacene‐based organic field‐effect transistors: a charge transient spectroscopy study

Charge-based deep level transient spectroscopy of phosphorous-doped homoepitaxial diamond

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