Transparent flexible
transistor array requests large-area fabrication,
high integration, high manufacturing throughput, inexpensive process,
uniformity in transistor performance, and reproducibility. This study
suggests a facile and reliable approach to meet the requirements.
We use the Al-coated polymer nanofiber patterns obtained by electrohydrodynamic
(EHD) printing as a photomask. We use the lithography and deposition
to produce highly aligned nanolines (NLs) of metals, insulators, and
semiconductors on large substrates. With these NLs, we demonstrate
a highly integrated NL field-effect transistor (NL-FET) array (105/(4 × 4 in2), 254 pixel-per-inch) made of
pentacene and indium zinc oxide semiconductor NLs. In addition, we
demonstrate a NL complementary inverter (NL-CI) circuit consisting
of pentacene and fullerene NLs. The NL-FET array shows high transparency
(∼90%), flexibility (stable at 2.5 mm bending radius), uniformity
(∼90%), and high performances (mobility = 0.52 cm2/(V s), on–off ratio = 7.0 × 106). The NL-CI
circuit also shows high transparency, flexibility, and typical switching
characteristic with a gain of 21. The reliable large-scale fabrication
of the various NLs proposed in this study is expected to be applied
for manufacturing transparent flexible nanoelectronic devices.