Charge transport and trap characterization in individual GaSb nanowires

Xu, Wei; Chin, A. H.; Ye, Laura; Ning, Cun‐Zheng; Yu, Hongbin

doi:10.1063/1.4720080

Cited by 37 publications

(41 citation statements)

References 25 publications

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“…The SCLC approach to study the characteristic parameters of individual nanowires, such as concentration of charge traps and their activation energy, from current-voltage characteristics has been discussed recently. [12][13][14][15] Bismuth sulfide (Bi 2 S 3 ) is a direct band gap semiconductor (E g -1.3 eV) with n-type conduction. It has a great potential for application in resistive memory devices due to its specific intrinsic doping with sulfur vacancies that can play a key role in resistive switching.…”

Section: Introductionmentioning

confidence: 99%

Space charge limited current mechanism in Bi2S3 nanowires

Kunakova

Viter

Abay

et al. 2016

Journal of Applied Physics

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Original citationKunakova, G.; Viter, R.; Abay, S.; Biswas, S.; Holmes, J. D.; Bauch, T. We report on the charge transport properties of individual Bi 2 S 3 nanowires grown within the pores of anodized aluminum oxide templates. The mean pore diameter was 80 nm. Space charge limited current is the dominating conduction mechanism at temperatures below 160 K. Characteristic parameters of nanowires, such as trap concentration and trap characteristic energy, were estimated from current-voltage characteristics at several temperatures. V C 2016 AIP Publishing LLC.

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Section: Introductionmentioning

confidence: 99%

Space charge limited current mechanism in Bi2S3 nanowires

Kunakova

Viter

Abay

et al. 2016

Journal of Applied Physics

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“…4,24 We further note that the post DEP thermal anneal step helps to eliminate the presence of mid-gap states at the Au-CuO interface, which can otherwise lead to Fermi level pinning. 25 Second, we obtain a poor fit of our data with the operational form 26 of the back-toback Schottky diode (see characteristic fitting in supplementary material 27 S1 for IV obtained at 260 K). Finally, as we show next, a low voltage, linear IV is observed in all our data which is not characteristic of back-to-back Schottky conduction mechanism, either.…”

mentioning

confidence: 99%

Charge transport in single CuO nanowires

Yin

et al. 2014

Applied Physics Letters

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Charge transport in single crystal, p-type cupric oxide (CuO) nanowire (NW) was studied through temperature based (120 K–400 K) current-voltage measurements. CuO NW with a diameter of 85 nm was attached to Au electrodes 2.25 μm apart, using dielectrophoresis. At low electrical field (<0.89 × 103 V/cm), an ohmic conduction is observed with an activation energy of 272 meV. The injected electrons fill traps with an average energy, ET = 26.6 meV and trap density, NT = 3.4 × 1015 cm−3. After the traps are saturated, space charge limited current mechanism becomes dominant. For 120 K ≤ T ≤ 210 K phonon scattering limits mobility. For T ≥ 220 K, a thermally activated mobility is observed and is attributed to small polaron hopping with an activation energy of 44 meV. This mechanism yields a hole mobility of 0.0015 cm2/V s and an effective hole concentration of 4 × 1018 cm−3 at 250 K.

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“…The extracted hole density decreases drastically for D NW < 50 nm [ Figure 3(c)], which could be attributed to a stronger influence of a surface depletion layer formed due to interface state/trapped charges [16][17][18] or presence of a thin intrinsic, or even n-type, shell formed due to oxygen absorption on GaSb. 19 The radius of the conductive core (r C ) in the NWs, assuming a surface Fermi level pinning, can be obtained from the full depletion approximation. From the Gauss law, the surface potential, wðr NW Þ, is obtained as where N a is the doping concentration.…”

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confidence: 99%

Impact of doping and diameter on the electrical properties of GaSb nanowires

Babadi

Svensson

Lind

et al. 2017

Applied Physics Letters

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The effect of doping and diameter on the electrical properties of vapor-liquid-solid grown GaSb nanowires was characterized using long channel back-gated lateral transistors and top-gated devices. The measurements showed that increasing the doping concentration significantly increases the conductivity while reducing the control over the channel potential and shifting the threshold voltage, as expected. The highest average mobility was 85 cm2/V·s measured for an unintentionally doped GaSb nanowire with a diameter of 45 nm, whereas medium doped nanowires with large diameters (81 nm) showed a value of 153 cm2/V·s. The mobility is found to be independent of nanowire diameter in the range of 36 nm–68 nm, while the resistivity is strongly reduced with increasing diameter attributed to the surface depletion of charge carriers. The data are in good agreement with an analytical calculation of the depletion depth. A high transconductance was achieved by scaling down the channel length to 200 nm, reaching a maximum value of 80 μS/μm for a top-gated GaSb nanowires transistor with an ON-resistance of 26 kΩ corresponding to 3.9 Ω.mm. The lowest contact resistance obtained was 0.35 Ω·mm for transistors with the highest doping concentration.

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Charge transport and trap characterization in individual GaSb nanowires

Cited by 37 publications

References 25 publications

Space charge limited current mechanism in Bi2S3 nanowires

Space charge limited current mechanism in Bi2S3 nanowires

Charge transport in single CuO nanowires

Impact of doping and diameter on the electrical properties of GaSb nanowires

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