Charge transport at the interface of n-GaAs (100) with an aqueous HCl solution: Electrochemical impedance spectroscopy study

Lebedev, Mikhail V.; Masuda, Toshio; Uosaki, Kohei

doi:10.1134/s1063782612040136

Cited by 12 publications

(14 citation statements)

References 26 publications

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“…for 2 min to remove arsenic and gallium oxides [19]. Then, substrates are rinsed in deionized water for 2 min to remove Ga-Clx species since they are soluble in water [20]. Finally, substrates are immersed in 1 M HClO4 (supporting electrolyte) for 2 min to remove possible Clions remaining in the solution or adsorbed at the substrate surface.…”

Section: Methodsmentioning

confidence: 99%

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Electrodeposition of Bi films on H covered n-GaAs(111)B substrates

Prados

Ranchal

2019

Electrochimica Acta

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We have investigated how the presence of an adsorbed hydrogen layer affects the nucleation and properties of Bi layers grown by dc electrodeposition at different overpotentials on n-GaAs(111)B substrates with a carrier concentration of 1.3 •10 17 cm -3 in darkness and at 300 K. The kinetics of Bi(III) ions reduction is controlled by the overpotential but also negatively affected by the adsorbed hydrogen layer, as deduced from the deconvolution of the current density transients recorded during the nucleation of the films.The surface morphology and the structural properties of the Bi films are correlated with the nucleation process and therefore, influenced by both the overpotential and the adsorbed hydrogen layer. At low overpotentials, porous and rough Bi films with a low crystal quality are obtained due to the low rate of proton and Bi(III) ion reduction. As the overpotentials raises, the rate of these reactions increase leading to flatter and more compact Bi films with a higher crystal quality. The electrical properties of the Bi/n-GaAs interface depend on the interfacial states whose origin is again the combined effect of the adsorbed hydrogen layer and growth overpotential.

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Section: Methodsmentioning

confidence: 99%

“…EC,s = (-3.737 ± 0.020) eV (20) The uncertainty has been considered as the standard deviation of the average due to the different reported values. In the same way we have calculated the valence band (VB) edge:…”

Section: Energy Band Diagram Of the Seimentioning

confidence: 99%

Electrodeposition of Bi films on H covered n-GaAs(111)B substrates

Prados

Ranchal

2019

Electrochimica Acta

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“…Chemical dissolution of III-V materials is, for the most part, governed by the number of hole carriers drifted into the solid/electrolyte interface [50]. The excess hole carriers generated by photoexcitation of the semiconductor can contribute either to surface state mediated recombination [51], or by participating in the charge transfer reaction with the surrounding electrolyte via surface states [52]. While recombination by means of surface states is non-radiative and independent of the surface band bending [53], the hole-driven photoetching reactions can be changed according to band bending conditions.…”

Section: And Symmetric Stretching Vibration Of Somentioning

confidence: 99%

Sodium dodecyl sulfate decorated Legionella pneumophila for enhanced detection with a GaAs/AlGaAs nanoheterostructure biosensor

Aziziyan

Hassen

Sharma

et al. 2020

Sensors and Actuators B: Chemical

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The net electric charge associated with a bacterial strain is primarily defined by the number of available functional groups at its surface and we observed that it can determine the limit of detection of a charge-sensing biosensor. We have investigated the dynamic range of bacterial electric charge variations through binding negatively charged sodium dodecyl sulphate (SDS) molecules, with the objective of improving the detection limit of a charge-sensing GaAs/AlGaAs nanoheterostructure biosensor designed for detection of Legionella pneumophila. A twofold increased zeta potential of L. pneumophila was measured at pH 7.4 following the exposure of these bacteria to an SDS solution at 0.02 mg/mL. Subsequently, it was possible to detect SDS decorated and heatinactivated L. pneumophila at 10 3 CFU/mL. This illustrates the fundamental role of the bacterial electric charge in the operation of photocorrosion-based III-V semiconductor biochips. We discuss the mechanisms of bacterial interaction with SDS, critical aspects of decorating bacteria with this anionic surfactant and the channels responsible for charge transfer.

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“…The equivalent electrical circuit of the SEI is formed by several capacitances and resistances: semiconductor capacitance (C sc ), surface states capacitance (C SS ), double layer capacitance (C H ), charge transfer resistance (R t ), etc. 40,43,47 .…”

Section: Analysis Of the Current Density Transientsmentioning

confidence: 99%

Electrodeposition of Bi Thin Films on n-GaAs(111)B. I. Correlation between the Overpotential and the Nucleation Process

Prados

Ranchal

2018

J. Phys. Chem. C

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Bismuth thin films constitute a promising nanostructure for the fabrication of spin-based devices. To achieve this goal, it is necessary to obtain high-quality Bi layers with controlled and reproducible properties. Therefore, studies focused on the understanding of the nucleation process and the correlation between the growth conditions and the film properties are of great interest. In this work, we have studied the electrodeposition of Bi thin films onto GaAs(111)B substrates at different overpotentials. In Part I, we have analyzed the nucleation of the films by means of potentiostatic curves. The current density transients have been deconvoluted into individual processes taking into account the energy band diagram of the semiconductor-electrolyte interface. The deconvolution of the current density transients indicates that Bi electrodeposition follows a 3D nucleation controlled by diffusion, accompanied by concurrent processes such as both proton adsorption and reduction. The competition of these processes is controlled by the energy distribution of the surface states at the semiconductor-electrolyte interface and determines the nucleation process. The correlation between the properties of the Bi films and the Bi/GaAs interface with the nucleation process, i.e., with overpotential, is discussed in detail in Part II of this work.

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Charge transport at the interface of n-GaAs (100) with an aqueous HCl solution: Electrochemical impedance spectroscopy study

Cited by 12 publications

References 26 publications

Electrodeposition of Bi films on H covered n-GaAs(111)B substrates

Electrodeposition of Bi films on H covered n-GaAs(111)B substrates

Sodium dodecyl sulfate decorated Legionella pneumophila for enhanced detection with a GaAs/AlGaAs nanoheterostructure biosensor

Electrodeposition of Bi Thin Films on n-GaAs(111)B. I. Correlation between the Overpotential and the Nucleation Process

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