2011
DOI: 10.15407/spqeo14.02.170
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Charge transport in bismuth orthogermanate crystals

Abstract: Abstract. Current-voltage relations in bismuth orthogermanate crystals with Ag, Pt, InGa electrodes have been measured in the modes of double and unipolar injection of charge carriers. It has been shown that Bi 4 Ge 3 O 12 is relaxation type semiconductor. The appearance of the regions with negative differential resistance or sublinear rise of the current in characteristics is connected with the injection of the minority charge carriers and recombination processes in the space charge layer.

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Cited by 1 publication
(4 citation statements)
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“…They fundamentally differ both from the I-V relations shown in Fig. 1, and from the I-V relations measured in the unipolar hole injection mode for pure crystals [6]. The formation of a space charge enriched in holes does not occur.…”
Section: Resultscontrasting
confidence: 72%
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“…They fundamentally differ both from the I-V relations shown in Fig. 1, and from the I-V relations measured in the unipolar hole injection mode for pure crystals [6]. The formation of a space charge enriched in holes does not occur.…”
Section: Resultscontrasting
confidence: 72%
“…1, 2. Previously, the authors studied I-V characteristics in nominally pure crystals Bi4Ge3O12 [5][6]. They became a good tool for studying the processes of space charges formation in bismuth orthogermanate crystals.…”
Section: Resultsmentioning
confidence: 99%
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