Charge Transport in Disordered Organic Photoconductors a Monte Carlo Simulation Study

Random walk numerical simulation for hopping transport at finite carrier concentrations: diffusion coefficient and transport energy concept

“…As mentioned above, this leads to the possibility of traps that happen to be very close to each other. This problem does not appear in the simulations of Ba¨ssler and coworkers, 11,38,43 which are executed on a cubic lattice. Simulations on-lattice reduce the numerical demands and produces results more in accordance to the assumptions of the theory (see eqn (8a) for instance) but at the cost of losing the subtleties of the positional disorder implicit to these kind of systems.…”

“…The second approach is the hopping transport. [11][12][13][14] In the hopping model electron transport occurs by direct jumps between localized states and the hopping rates depend explicitly on both energy difference and spatial distance. 15 To obtain usable analytical expressions for electron mobilities and diffusion coefficients requires making averages over spatial and energy disorder.…”

Physical electrochemistry of nanostructured devices

“…137,138 VRH has been observed in a wide variety of systems such as Si-and Ge-based inorganic semiconductors, 209 conducting polymers and assemblies of quantum dots. 210 The hopping conductivity has been amply studied for bulk amorphous semiconductors 137,138 and organic semiconductors with a Gaussian DOS, 206,207,[211][212][213][214][215][216][217] but these developments have not been generally applied in electrochemistry experiments. Arkhipov, Ba¨ssler and coworkers have reported some models of the electronic conductivity of electrochemically doped polymers.…”

Performance of a polymer light-emitting diode with enhanced charge carrier mobility

“…The hole mobility m p exhibits a dependence on electric ®eld E according to ln m p G p E [3], as has also been observed from time-of-¯ight experiments in many molecularly doped polymers and amorphous glasses [4]. It has been proposed that the microscopic origin of the observed mobility arises from hopping between sites that are subject to both positional and energetic disorder [5]. For light generation injected charge carriers have to move through the polymer layer over a certain distance before they can recombine.…”

“…The presence of the two bulky OC 10 H 21 side-chains in the OC 10 C 10 gives rise to an increase of the hole mobility of one order of magnitude [7]. By comparing the observed mobilities with a (correlated) Gaussian disorder model [5,8], a width of the Gaussian density of states of 112 and 93 meV has been obtained for the OC 1 C 10 and OC 10 C 10 , respectively. In the present study, the device performance of a OC 10 C 10 -based PLED with an enhanced mobility is compared with the performance of our standard OC 1 C 10 devices.…”