Charge transport in germanium doped phosphorene nanoribbons

Azizi, Maryam; Ghavami, Badie

doi:10.1039/c8ra03041c

Cited by 9 publications

(3 citation statements)

References 50 publications

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“…Two dimensional (2D) materials which have been a hot topic in last decade, present a broad range of tunable electronic and optical properties that make them promising candidates for nanoelectronics, [8,9,10,11] energy conversion/storage, [12,20,13,14] and catalysis. [15,16,17] Several experimental studies have shown that 2D material-based photocatalysts exhibit highly improved photocatalytic activities compared to the traditional bulk materials.…”

Section: Introductionmentioning

confidence: 99%

Silicon diphosphide (SiP2) and silicon diarsenide (SiAs2): Novel stable 2D semiconductors with high carrier mobilities, promising for water splitting photocatalysts

Shojaei

Mortazavi

Zhuang

et al. 2020

Materials Today Energy

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Two dimensional (2D) semiconducting light absorbers, have recently considered as promising components to improve the efficiency in the photocatalytic hydrogen production via water splitting. In this work, by employing density functional theory computations, we introduced novel SiX2 (X = P, As) nanosheets in tetragonal (penta-) and orthorhombic (rec-) phases, as promising light absorber semiconductors for overall water splitting. The predicted nanomembranes exhibit good mechanical, dynamical and thermal stabilities. They also show small cleavage energies in the range of 0.31 J/m 2 to 0.39 J/m 2 , comparable to that of the graphene and thus suggesting the feasibility of their experimental exfoliation. Notably, predicted monolayers are semiconductors with indirect band gaps of 2.65 eV for penta-SiP2 , 2.35 eV for penta-SiAs2 , 1.89 eV for rec-SiAs2 , and a direct band gap of 2.21 eV for rec-SiP2. These nanomaterials however show relatively large interlayer quantum confinement effects, resulting in smaller band gap values for bilayer lattices. We observed a huge difference between the electron and hole mobilities for penta-SiP2 and rec-SiAs2 monolayers and highly directional dependent electron and hole mobilities in rec-SiP2 , yielding an effective separation of photogenerated charge carriers. Remarkably, these novel nanomembranes show strong absorption in the visible region of light as well as suitable band edge positions for photocatalytic water splitting reaction, specifically under neutral conditions.

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Section: Introductionmentioning

confidence: 99%

Silicon diphosphide (SiP2) and silicon diarsenide (SiAs2): Novel stable 2D semiconductors with high carrier mobilities, promising for water splitting photocatalysts

Shojaei

Mortazavi

Zhuang

et al. 2020

Materials Today Energy

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“…Additionally, it can be achieved through oxidation [24,25], passivation [26], or a combination of diverse effects, such as the interaction between electric fields and strain [27][28][29], or between electric fields and doping [20]. In this context, phosphorene as a 2D material with a finite direct band gap, demonstrates high mobility, anisotropic effective mass, and an impressive current on/off ratio [30][31][32][33][34][35][36][37][38][39]. Due to these characteristics, it stands as an ideal candidate for semiconductor technology applications that demand precise gap engineering [33,34,40].…”

Section: Introductionmentioning

confidence: 99%

Gap engineering effects on transport and tunneling magnetoresistance properties in phosphorene ferromagnetic/normal/ferromagnetic junction

Oubram

2024

J. Phys.: Condens. Matter

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Tuning the band gap is of utmost importance for the practicality of 2D materials in the semiconductor industry. In this study, we investigate the ballistic transport and the tunneling magnetoresistance (TMR) properties within a modulated gap in a Ferromagnetic/Normal/Ferromagnetic (F/N/F) phosphorene junction. The theoretical framework is established on a Dirac-like Hamiltonian, the transfer matrix method, and the Landauer-Büttikerr formalism to characterize electron behavior and obtain transmittance, conductance and TMR. Our results reveal that a reduction in gap energy leads to an enhancement of conductance for both parallel and anti-parallel magnetization configurations. In contrast, a significant reduction and redshift in TMR have been observed. Notably, the application of an electrostatic field in a gapless phosphorene F/N/F junction induces a blueshift and a slight increase in TMR. Furthermore, we found that introducing an asymmetrically applied electrostatic field in this gapless junction results in a significant reduction and redshift in TMR. Additionally, intensifying the applied magnetic field leads to a substantial increase in TMR. These findings could be useful for designing and implementing practical applications that require precise control over the tunneling magnetoresistance properties of a phosphorene F/N/F junction with a modulated gap.

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“…In this context, phosphorene a 2D material with a direct band gap, high carriers mobility, anisotropic effective mass and high current on/off ratio [15][16][17][18][19][20][21][22][23] is ideal as the basis material for superlattices. The phosphorene's puckered honeycomb structure results in an anisotropic band structure with the armchair and zigzag as fundamental directions [15,16].…”

Section: Introductionmentioning

confidence: 99%

Tuning the magnetoresistance properties of phosphorene with periodic magnetic modulation

Oubram

Sadoqi

Cisneros-Villalobos

et al. 2023

J. Phys.: Condens. Matter

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Periodic superlattices constitute ideal structures to modulate the transport properties of two-dimensional materials. In this paper, we show that the tunneling magnetoresistance in phosphorene can be tuned effectively through periodic magnetic modulation. Deltaic magnetic barriers are arranged periodically along the phosphorene armchair direction in parallel and anti-parallel magnetization fashion. The theoretical treatment is based on a low-energy effective Hamiltonian, the transfer matrix method and the Landauer-B¨uttiker formalism. We find that the periodic modulation gives rise to oscillating transport characteristics for both parallel and anti-parallel magnetization configurations. More importantly, by adjusting the electrostatic potential appropriately we find Fermi energy regions for which the anti-parallel magnetization conductance is reduced significantly while the parallel magnetization conductance keeps considerable values, resulting in an effective tunneling magnetoresistance that increases with the magnetic field strength. These findings could be useful in the design of magnetoresistive devices based on magnetic phosphorene superlattices.

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Charge transport in germanium doped phosphorene nanoribbons

Cited by 9 publications

References 50 publications

Silicon diphosphide (SiP2) and silicon diarsenide (SiAs2): Novel stable 2D semiconductors with high carrier mobilities, promising for water splitting photocatalysts

Silicon diphosphide (SiP2) and silicon diarsenide (SiAs2): Novel stable 2D semiconductors with high carrier mobilities, promising for water splitting photocatalysts

Gap engineering effects on transport and tunneling magnetoresistance properties in phosphorene ferromagnetic/normal/ferromagnetic junction

Tuning the magnetoresistance properties of phosphorene with periodic magnetic modulation

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