Charge transport in layer semiconductors

Minder, R.; Ottaviani, G.; Canali, C.

doi:10.1016/0022-3697(76)90023-8

Cited by 115 publications

(27 citation statements)

References 33 publications

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“…The obtained room temperature resistivity value and the effect of implantation on conductivity behavior of as-grown GaSe single crystals are the same with the values obtained for N-and Si implanted GaSe [19,20,24]. Ln (σ) versus T -1 variations show three linear regions with different activation energies describing different conduction mechanisms at specific temperature intervals.…”

Section: Resultssupporting

confidence: 66%

Structural, electrical and optical properties of Ge implanted GaSe single crystals grown by Bridgman technique

Karaağaç¹,

Parlak²,

Karabulut³

et al. 2006

Cryst. Res. Technol.

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Structural, optical and electrical properties of Ge implanted GaSe single crystal have been studied by means of X‐Ray Diffraction (XRD), temperature dependent conductivity and photoconductivity (PC) measurements for different annealing temperatures. It was observed that upon implanting GaSe with Ge and applying annealing process, the resistivity is reduced from 2.1 × 109 to 6.5 × 105 Ω‐cm. From the temperature dependent conductivities, the activation energies have been found to be 4, 34, and 314 meV for as‐grown, 36 and 472 meV for as‐implanted and 39 and 647 meV for implanted and annealed GaSe single crystals at 500°C. Calculated activation energies from the conductivity measurements indicated that the transport mechanisms are dominated by thermal excitation at different temperature intervals in the implanted and unimplanted samples. By measuring photoconductivity (PC) measurement as a function of temperature and illumination intensity, the relation between photocurrent (IPC) and illumination intensity (Φ) was studied and it was observed that the relation obeys the power law, IPC αΦn with n between 1 and 2, which is indication of behaving as a supralinear character and existing continuous distribution of localized states in the band gap. As a result of transmission measurements, it was observed that there is almost no considerable change in optical band gap of samples with increasing annealing temperatures for as‐grown GaSe; however, a slight shift of optical band gap toward higher energies for Ge‐implanted sample was observed with increasing annealing temperatures. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Resultssupporting

confidence: 66%

Structural, electrical and optical properties of Ge implanted GaSe single crystals grown by Bridgman technique

Karaağaç¹,

Parlak²,

Karabulut³

et al. 2006

Cryst. Res. Technol.

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“…[11,12] GaSe is a layered material that belongs to the III-VI family of semiconductors (13-16, in the IUPAC nomenclature). Although electrical properties of bulk GaSe have been studied since the 1970s, [14][15][16][17] few-layer GaSe have been seldom explored for possible nanoelectronic applications. [13] Each GaSe covalent layer consists of four atomic sublayers, stacked in a SeGaGaSe sequence: the relative positions between GaSe layers define different polytypes with different crystal symmetries (see Figure 1).…”

Section: Doi: 101002/aelm201600399mentioning

confidence: 99%

High‐Performance 2D p‐Type Transistors Based on GaSe Layers: An Ab Initio Study

Kuc

Cusati

Dib

et al. 2017

Adv Elect Materials

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“…Si Ge CZT HgI 2 PbI 2 CdTe InSb GaAs l e 1400 [11] 3900 [13] 1120 [15] 67 [16] 8 [ 18] 945 [15] 78000 [19] 8800 [19] l h 450 [12] 1900 [14] 66 [15] 4 [ 17] 2 [ 18] 66 [15] 750 [19] 400 [19] Scintillators CsI NaI CaF 2 (Eu) BaF 2 GSO NaCl l e 862 [10] 0.11 (at 700 C) [20]10 [21] 1200 (7K) [22] l h yield or scintillator yield is defined as the total emitted photons divided by the total excitations created in the track. Considering only the linear, bimolecular (second order), and Auger (third order) processes occurring within the track, the scintillator yield is obtained as 6 Y ¼ a 1 n þ a 2 n 2 a 3 n þ a 4 n 2 þ a 5 n 3 ;…”

Section: Semiconductorsmentioning

confidence: 99%

Study of nonproportionality in the light yield of inorganic scintillators

Singh

2011

Journal of Applied Physics

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Using a phenomenological approach, the light yield is derived for inorganic scintillators as a function of the rates of linear, bimolecular, and Auger processes occurring in the electron track initiated by an x ray or a γ-ray photon. A relation between the track length and incident energy is also derived. It is found that the nonproportionality in the light yield can be eliminated if either nonlinear processes of interaction among the excited electrons, holes, and excitons can be eliminated from occurring or the high density situation can be relieved by diffusion of carriers from the track at a faster rate than the rate of activation of nonlinear processes. The influence of the track length and radius on the yield nonproportionality is discussed in view of the known experimental results. Inventing new inorganic scintillating materials with high carrier mobility can lead to a class of proportional inorganic scintillators. Results agree qualitatively with experimental results for the dependence of light yield on the incident energy.

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Charge transport in layer semiconductors

Cited by 115 publications

References 33 publications

Structural, electrical and optical properties of Ge implanted GaSe single crystals grown by Bridgman technique

Structural, electrical and optical properties of Ge implanted GaSe single crystals grown by Bridgman technique

High‐Performance 2D p‐Type Transistors Based on GaSe Layers: An Ab Initio Study

Study of nonproportionality in the light yield of inorganic scintillators

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