Charge transport in microcrystalline silicon films

Paramagnetic states in µc‐SiC:H thin films prepared by Hot‐Wire CVD at low temperatures

“…One could speculate that deep defects are important in a-SiC, while states closer to the band edges are more important in highly crystalline material, being aware however, that significant potential fluctuations are expected in disordered [9] and mixed phase materials [10] and many paramagnetic states from energy positions within the gap of the different constituents may contribute to the ESR signal.…”

Electronic transport in low temperature nanocrystalline silicon thin-film transistors obtained by hot-wire CVD

“…This suggests that potential barriers could exist at structures bigger than the crystallites. According to previous works [11], we assume that potential barriers exist not at the grain boundaries of crystallites but at the interfaces between columns. Then, considering that the columns have an average diameter of several tens of nanometers, less than 10 17 cm -3 trapped carriers would be sufficient to form potential barriers.…”

Thermally stimulated currents in thin silicon films arising from atmospheric effects without light exposure

“…In a standard TSC experiment illumination splits the Fermi levels, resulting in movement of quasi Fermi level towards band edges. In the present case, when the experiments are performed in dark conditions, the Fermi level is not split, however a shift of the Fermi level position toward the transport level with decreasing temperature can be observed [11,12], that may give rise to the non-linear behavior of the dark conductivity in an Arrhenius plot. The direction of Fermi level shift with decreasing temperature is shown by the arrow in Fig.…”