Charge Transport inside TiO2 Memristors Prepared via FEBID

Baranowski, Markus; Sachser, Roland; Marinković, B P; Ivanović, Stefan; Huth, Michael

doi:10.3390/nano12234145

Cited by 4 publications

(3 citation statements)

References 40 publications

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“…Reference [52] also fabricated a double-switching layer device with moderate EF voltage, but the operating voltage and current were higher. Moreover, [55,58] reported very thin devices (7.5 and 10 nm, respectively) where 7.5 nm devices showed very close switching voltages to our device, but EF voltage was higher while the 10 nm device operated at higher current and voltage, respectively. To conclude, this study demonstrates a simple memristive architecture fabricated with conventional materials deprived of additional doping or annealing, ultimately operating at a low voltage, which could pave the approach towards multifunctional memristive devices operating at low voltages.…”

Section: Resultssupporting

confidence: 64%

A stable undoped low-voltage memristor cell based on Titania (TiOx)

Ullah,

Tarkhan,

Fredj

et al. 2023

Nano Ex.

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An asymmetric memristive device fabricated with a titania (TiOx)-based switching layer deposited through atomic layer deposition with a thickness of ∼37 nm was investigated. X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy coupled with energy-dispersive x-ray spectroscopy were employed for device structural characterization. A unipolar resistive switching behavior (both at positive and negative voltages) was observed through the memristor’s current–voltage characteristics. A remarkably smaller forming voltage (from the top Pt electrode to the grounded Au electrode) of 0.46 V was achieved, while it approached (positive bias from the Au electrode and holding Pt electrode as grounded) 0.25 V, which is a much smaller forming voltage than has ever been reported for titanium-based oxides without doping. The retention and endurance characterization over 2000 switching cycles were satisfactory without degradation.

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Section: Resultssupporting

confidence: 64%

A stable undoped low-voltage memristor cell based on Titania (TiOx)

Ullah,

Tarkhan,

Fredj

et al. 2023

Nano Ex.

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“…66 Dissociative electron attachment (at electron energies below the first ionization energy), dissociative ionization (at higher electron energies) and neutral dissociation are the processes responsible for the fragmentation of precursor molecules. One of the applications of the FEBID process is presented in nanofabrication of Pt/TiO 2 /Pt memristor device 67 obtained from electron irradiation by trimethyl(methylcyclopentadienyl)platinum( iv ) used as a precursor for Pt–C electrode deposition and titanium isopropoxide used as a precursor for the TiO 2 layer.…”

Section: Belgrade Nodes: Status Challenges and Directionsmentioning

confidence: 99%

Current stage and future development of Belgrade collisional and radiative databases/datasets of importance for molecular dynamics

Vujčić,

Marinković,

Srećković

et al. 2023

Phys. Chem. Chem. Phys.

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“…In most of the cases, FEBID is used to deposit metals from organometallic precursors [1]. FEBID has been applied in many fields, including nano-magnetism [2][3][4], plasmonics [5][6][7][8] and photonics [9,10], the manufacturing of micro-and nano-sensors [11][12][13], single electron transistors [14] and memristors [15], and for atomic [16,17] and magnetic force microscopy tips [18], as well as for photolithography mask corrections [19].…”

Section: Introductionmentioning

confidence: 99%

Ligand Size and Carbon-Chain Length Study of Silver Carboxylates in Focused Electron-Beam-Induced Deposition

et al. 2023

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Gas-assisted focused electron-beam-induced deposition is a versatile tool for the direct writing of complex-shaped nanostructures with unprecedented shape fidelity and resolution. While the technique is well-established for various materials, the direct electron beam writing of silver is still in its infancy. Here, we examine and compare five different silver carboxylates, three perfluorinated: [Ag2(µ-O2CCF3)2], [Ag2(µ-O2CC2F5)2], and [Ag2(µ-O2CC3F7)2], and two containing branched substituents: [Ag2(µ-O2CCMe2Et)2] and [Ag2(µ-O2CtBu)2], as potential precursors for focused electron-beam-induced deposition. All of the compounds show high sensitivity to electron dissociation and efficient dissociation of Ag-O bonds. The as-deposited materials have silver contents from 42 at.% to above 70 at.% and are composed of silver nano-crystals with impurities of carbon and fluorine between them. Precursors with the shortest carbon-fluorine chain ligands yield the highest silver contents. In addition, the deposited silver content depends on the balance of electron-induced ligand co-deposition and ligand desorption. For all of the tested compounds, low electron flux was related to high silver content. Our findings demonstrate that silver carboxylates constitute a promising group of precursors for gas-assisted focused electron beam writing of high silver content materials.

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Charge Transport inside TiO2 Memristors Prepared via FEBID

Cited by 4 publications

References 40 publications

A stable undoped low-voltage memristor cell based on Titania (TiOx)

A stable undoped low-voltage memristor cell based on Titania (TiOx)

Current stage and future development of Belgrade collisional and radiative databases/datasets of importance for molecular dynamics

Ligand Size and Carbon-Chain Length Study of Silver Carboxylates in Focused Electron-Beam-Induced Deposition

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