Charge Transport Mechanisms in Au–CdTe Space-Charge-Limited Schottky Diodes

Detailed Study of Bandgap Energy Levels in CdTe Films Electrodeposited from Chlorine-Containing Solutions

“…6, in which the temperature dependence of current (in forward direction) in dark and at a constant bias is shown for both samples. Sample S2, similar to all samples deposited from Cl-free solutions (85 C, À580 mV), shows a relatively large activation energy (0.65 eV) which corresponds to the ionization energy of an electron trap [5]. On the contrary, sample S38, like all other samples which were deposited from Cl-contain-168 A. E. Rakhshani and Y.…”

“…Annealing in air, which is associated with the development of a deeper hole trap (0.45 eV, as discussed above) shifts the Fermi level upward and causes an upward band bending at the Au±CdTe interface. After annealing, the forward current is associated with a positive bias and follows, in a limited range, the Schottky diode equation I I 0 exp qV=nkT, where the parameters have their usual meanings [5]. The ideality factor is n 1:22 and the barrier height is f 0:82 eV.…”

“…These films are, in general, n-type and have a high resistivity, due to the compensation effect. From the study of charge transport mechanisms in these films, it was established that a shallow donor, a deep donor-type level and a deep acceptor-type level are involved in the compensation effect [5]. The deep levels are located close to the middle of the bandgap.…”

Effect of film thickness on microstructure parameters and optical constants of CdTe thin films

“…Shaaban). on structure, optical and electrical properties of CdTe thin films [11][12][13][14][15][16][17][18][19]. However, still it requires further investigation to optimize the optical and electrical properties of CdTe films to use as a suitable candidate for solar cell applications.…”

Optoelectronic Properties of ZnSe, ITO, TiO2 and ZnO Thin Films

“…Figure 4 shows a typical plot of I -V characteristics of ZnSe /p-Si Schottky diodes in forward and reverse biases measured at different temperatures. This I -V characteristics follow the standard diode equation (Rakhshani et al, 1998) for forward bias below ≈ 0.4 V as given by…”