Charge transport trough a “metal-thick insulator-metal” structure during impulse voltage excitation

Dervos, C.T.; Bourkas, P.D.; Kagarakis, C.A.

doi:10.1016/0304-3886(91)90010-d

Cited by 12 publications

(10 citation statements)

References 19 publications

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“…It is confirmed experimentally that the voltage is still enhanced and even larger than the Fermi level difference between N- and P-type semiconductors when the thickness of the insulating layer is larger than 100 nm. It is inferred that the impact ionization should lead to the current transport through the insulating layer (Dervos et al., 1991, Kim and Rudd, 1994, Hwang et al., 1996, Solomon and Klein, 1975, Feng et al., 2019), whereas other transportation processes such as inelastic hopping also cannot be neglected (Xu et al., 1990, Xu et al., 1995, Vecchio et al., 2019), which will be studied in the following works. It is reasonable that some rebounded hot electrons/holes can involve in the impact ionization, since there are ultrahigh built-in electric field (E ≈ 3 × 10 5 V/cm for the case of 100 nm SiO 2 as shown in Figure 2F).…”

Section: Resultsmentioning

confidence: 99%

Direct-Current Generator Based on Dynamic PN Junctions with the Designed Voltage Output

Hao

Feng

et al. 2019

iScience

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SummaryThe static PN junction is the foundation of integrated circuits. Herein, we pioneer a high current density generation by mechanically moving N-type semiconductor over P-type semiconductor, named as the dynamic PN junction. The establishment and destruction of the depletion layer causes the redistribution and rebounding of diffusing carriers by the built-in field, similar to a capacitive charge/discharge process of PN junction capacitance during the movement. Through inserting dielectric layer at the interface of the dynamic PN junction, output voltage can be improved and designed numerically according to the energy level difference between the valence band of semiconductor and conduction band of dielectric layer. Especially, the dynamic MoS2/AlN/Si generator with open-circuit voltage of 5.1 V, short-circuit current density of 112.0 A/m2, power density of 130.0 W/m2, and power-conversion efficiency of 32.5% has been achieved, which can light up light-emitting diode timely and directly. This generator can continuously work for 1 h, demonstrating its great potential applications.

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Section: Resultsmentioning

confidence: 99%

Direct-Current Generator Based on Dynamic PN Junctions with the Designed Voltage Output

Hao

Feng

et al. 2019

iScience

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“…At applied forward voltages, the electric field induced hot electrons accumulated at the interface of the n-Si/HfO 2 heterostructure can cross the thick dielectric barrier (50 nm) by the electron-impact ionization mechanism [ 35 , 36 , 37 , 38 ] and are injected into the graphene. The superior electronic behavior of graphene [ 39 , 40 , 41 , 42 , 43 ] (like strong electron–electron interactions, high electrical conductivity along the plane, high charge carrier mobility, and weak charge carrier scattering, etc.)…”

Section: Resultsmentioning

confidence: 99%

Van der Waals Integrated Silicon/Graphene/AlGaN Based Vertical Heterostructured Hot Electron Light Emitting Diodes

Manjunath

Liu

et al. 2020

Nanomaterials

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Silicon-based light emitting diodes (LED) are indispensable elements for the rapidly growing field of silicon compatible photonic integration platforms. In the present study, graphene has been utilized as an interfacial layer to realize a unique illumination mechanism for the silicon-based LEDs. We designed a Si/thick dielectric layer/graphene/AlGaN heterostructured LED via the van der Waals integration method. In forward bias, the Si/thick dielectric (HfO2-50 nm or SiO2-90 nm) heterostructure accumulates numerous hot electrons at the interface. At sufficient operational voltages, the hot electrons from the interface of the Si/dielectric can cross the thick dielectric barrier via the electron-impact ionization mechanism, which results in the emission of more electrons that can be injected into graphene. The injected hot electrons in graphene can ignite the multiplication exciton effect, and the created electrons can transfer into p-type AlGaN and recombine with holes resulting a broadband yellow-color electroluminescence (EL) with a center peak at 580 nm. In comparison, the n-Si/thick dielectric/p-AlGaN LED without graphene result in a negligible blue color EL at 430 nm in forward bias. This work demonstrates the key role of graphene as a hot electron active layer that enables the intense EL from silicon-based compound semiconductor LEDs. Such a simple LED structure may find applications in silicon compatible electronics and optoelectronics.

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“…Tunneling through the NiO layers may occur for the smallest modulation wavelength samples [12] and would be evidences by a sharp reduction in r with decreasing L. In the literature, such metal-insulator-metal systems are most often studied in terms of tunneling processes [13][14][15]. High field transport mechanisms such as field assisted thermal ionization (Poole-Frenkel effect) [16], or electrode to bulk limited processes [12], are not relevant to these low voltage (field independent) resistivity measurements.…”

mentioning

confidence: 99%

Increased “Bulk” NiO Resistivity in Fe3O4
Smathers
¹
,
Testardi
²

1996
Phys. Rev. Lett.

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Transverse electrical resistivities have been measured on Fe 3 O 4 /NiO modulated structures of varying modulation wavelength L. A dependence of the resistivity on L is observed in which the resistivity rapidly increases many orders of magnitude as the modulation wavelength decreases from the bulk L !`limit in the vicinity of 600 Å. A qualitative argument is presented for a metal-insulator-metal interfacial-charge-transfer model which contains both the resistivity enhancement and the observed length scale dependence. [S0031-9007(96)

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Charge transport trough a “metal-thick insulator-metal” structure during impulse voltage excitation

Cited by 12 publications

References 19 publications

Direct-Current Generator Based on Dynamic PN Junctions with the Designed Voltage Output

Direct-Current Generator Based on Dynamic PN Junctions with the Designed Voltage Output

Van der Waals Integrated Silicon/Graphene/AlGaN Based Vertical Heterostructured Hot Electron Light Emitting Diodes

Increased “Bulk” NiO Resistivity in Fe3O4
Smathers
¹
,
Testardi
²

1996
Phys. Rev. Lett.

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Charge transport trough a “metal-thick insulator-metal” structure during impulse voltage excitation

Cited by 12 publications

References 19 publications

Direct-Current Generator Based on Dynamic PN Junctions with the Designed Voltage Output

Direct-Current Generator Based on Dynamic PN Junctions with the Designed Voltage Output

Van der Waals Integrated Silicon/Graphene/AlGaN Based Vertical Heterostructured Hot Electron Light Emitting Diodes

Increased “Bulk” NiO Resistivity in Fe3O4Smathers1, Testardi2 1996Phys. Rev. Lett.

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Increased “Bulk” NiO Resistivity in Fe3O4
Smathers
¹
,
Testardi
²

1996
Phys. Rev. Lett.