Charge transportation and photo generation process in polythiophene functionalized with tin (II) phthalocyanine (SnPc-PT) thin film

Roy, M.S.; Balraju, P.; Deol, Y. S.; Mishra, Ruchika; Choudhary, Vijay; Sharma, Ganesh D.

doi:10.1016/j.solmat.2008.06.017

Cited by 19 publications

(5 citation statements)

References 36 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Furthermore, the trapped charge limited current (TCLC) occurs for m > 2 with V m dependence of current 38 . www.nature.com/scientificreports www.nature.com/scientificreports/ The active layer low mobility causes inequality between the rate of collection of carriers at electrodes and rate of injection of carriers at electrodes which result SCLC to occur 39 and this happens to be more dominant at the junctions.…”

Section: Resultsmentioning

confidence: 99%

Synergistic enhancement in the microelectronic properties of poly-(dioctylfluorene) based Schottky devices by CdSe quantum dots

Muhammad

Tahir

Zeb

et al. 2020

Sci Rep

View full text Add to dashboard Cite

This paper reports the potential application of cadmium selenide (CdSe) quantum dots (QDs) in improving the microelectronic characteristics of Schottky barrier diode (SBD) prepared from a semiconducting material poly-(9,9-dioctylfluorene) (F8). Two SBDs, Ag/F8/P3HT/ITO and Ag/F8-CdSe QDs/P3HT/ITO, are fabricated by spin coating a 10 wt% solution of F8 in chloroform and 10:1 wt% solution of F8:CdSe QDs, respectively, on a pre-deposited poly(3-hexylthiophene) (P3HT) on indium tin oxide (ITO) substrate. To study the electronic properties of the fabricated devices, current-voltage (I-V) measurements are carried out at 25 °C in dark conditions. The I-V curves of Ag/F8/P3HT/ITO and Ag/F8-CdSe QDs/P3HT/ITO SBDs demonstrate asymmetrical behavior with forward bias current rectification ratio (RR) of 7.42 ± 0.02 and 142 ± 0.02, respectively, at ± 3.5 V which confirm the formation of depletion region. Other key parameters which govern microelectronic properties of the fabricated devices such as charge carrier mobility (µ), barrier height (φ b ), series resistance (R s ) and quality factor (n) are extracted from their corresponding I-V characteristics. Norde's and Cheung functions are also applied to characterize the devices to study consistency in various parameters. Significant improvement is found in the values of R s , n, and RR by 3, 1.7, and 19 times, respectively, for Ag/F8-CdSe QDs/P3HT/ ITO SBD as compared to Ag/F8/P3HT/ITO. This enhancement is due to the incorporation of CdSe QDs having 3-dimensional quantum confinement and large surface-to-volume area. Poole-Frenkle and Richardson-Schottky conduction mechanisms are also discussed for both of the devices. Morphology, optical bandgap (1.88 ± 0.5 eV) and photoluminescence (PL) spectrum of CdSe QDs with a peak intensity at 556 nm are also reported and discussed.Junction between different materials has a vital role in electronic and optoelectronic devices and is, therefore, one of the significant parts that govern the performance of a device. Well-controlled and easily tunable interfacial properties are always desirable in many electronic and optoelectronic devices. Among different types of junctions in devices, metal-semiconductor (MS) structures provide their role in the form of Schottky barrier diodes (SBDs) 1 . SBDs play a central role in the device functioning 2 as well as is the most widely used type of junctions in semiconductor devices 3 , solar cells 4 and field effect transistors (FETs) 5 . Mostly, commercially available electronic devices are based on inorganic semiconductors due to their high stability and performance 6 . However, due to high cost, high temperature complex processability and mechanical brittleness, inorganic semiconductors are not favorable. On the other hand, organic semiconducting materials are rich in pi-conjugated structures and have gained remarkable attention due to overcoming the issues with inorganic semiconductors. Organic semiconductors offer low temperature processability, low cost, mechanical flexibility, simple methods for devi...

show abstract

Section: Resultsmentioning

confidence: 99%

Synergistic enhancement in the microelectronic properties of poly-(dioctylfluorene) based Schottky devices by CdSe quantum dots

Muhammad

Tahir

Zeb

et al. 2020

Sci Rep

View full text Add to dashboard Cite

show abstract

“…During the sweep from 0 to +ve voltage, a space charge layer of holes is established in the polymer film near the anode electrode and spatial distribution of charges occurs [21]. Actually, the SCLC conduction occurs in the case where the bulk relaxation time is greater than the transit time of any injected excess carrier [22] and the extra injected charges cannot be swept to the collecting electrode at the same rate at which they are being injected [23]. The value of mobility for the blend is calculated in the SCLC region using Equation (1).…”

Section: Resultsmentioning

confidence: 99%

Investigation of charge transport in organic polymer donor/acceptor photovoltaic materials

Ahmad

Abdullah

Zafar

et al. 2014

Journal of Modern Optics

View full text Add to dashboard Cite

π-conjugated organic semiconductors have long been used as either holes or electrons transport materials. Recently, ambipolar charge carrier transport in these materials have been reported in many investigations. In this paper, we report on the basis of experimental results that the organic semiconductor (donor/acceptor) materials can be as good electrons transporters as these materials are holes transporters. In our study, the solution-processed unipolar diodes based on organic materials P3HT, VOPCPhO, and their blends with PCBM have been fabricated. The I-V characteristics of these diodes have been analyzed in the space-charge-limited current regime. The values of the electron and hole mobilities for the materials were found in the range of 10 −4 -10 −5 cm 2 /Vs.

show abstract

“…The field due this space charge dominates over the applied field and is responsible for limiting the current and giving rise to a SCLC conduction. SCLC occurs when the transit time of any excess injected carrier is shorter than the bulk relaxation time [16], in other words if the mobility is low and the extra injected charges cannot be swept to the collecting electrode at the same rate at which they are being injected [17].…”

Section: Resultsmentioning

confidence: 99%

“…6, ohmic and SCLC regions can be identified. In region I, the slope of the curve is approximately unity, indicating ohmic conduction due to thermally generated charge carriers, whereas region II with a slope of approximately 2 (quadratic dependence of the current on voltage) indicates trap-free space charge-limited current (TFSCLC) conduction [17]. Note that the slope approximately equal to 2 does not necessarily imply the absence of traps in the materials since the mobility of the charge carriers in an organic semiconductor is low and the extra injected charges cannot be swept to the collecting electrode at the same time at which they are being injected.…”

Section: Resultsmentioning

confidence: 99%

Investigation of temperature-dependent electrical properties of p-VOPc/n-si heterojunction under dark conditions

Khan

Sayyad

Karimov

2011

Ionics

View full text Add to dashboard Cite

An organic/inorganic heterojunction p-VOPc/n-Si was fabricated and its electrical properties were investigated. Temperature-dependent dark current-voltage (I-V) characteristics of the heterojunction exhibited rectification behaviour with a rectification ratio of 405 at ±1 V and room temperature. The current-voltage characteristics of the cell showed ohmic conduction at low voltages followed by a space charge-limited current (SCLC) conduction dominated by an exponential trap distribution at higher voltages. At room temperature, the series and shunt resistances were found to be approximately 1.4 and 100 kΩ, respectively. Diode ideality factor n was found to be 3.2 at room temperature and dropped to 1.9 at 363 K. Room temperature mobility of vanadyl phthalocyanine (VOPc) was extracted from the I-V characteristics in the SCLC region and was found approximately 15.5×10 −3 cm 2 V −1 s −1 . The effective barrier height, Ф B , was estimated as 0.77 eV. The effect of temperature, on various heterojunction parameters was recorded under dark conditions and at temperatures ranging from 300 to 363 K.

show abstract

Charge transportation and photo generation process in polythiophene functionalized with tin (II) phthalocyanine (SnPc-PT) thin film

Cited by 19 publications

References 36 publications

Synergistic enhancement in the microelectronic properties of poly-(dioctylfluorene) based Schottky devices by CdSe quantum dots

Synergistic enhancement in the microelectronic properties of poly-(dioctylfluorene) based Schottky devices by CdSe quantum dots

Investigation of charge transport in organic polymer donor/acceptor photovoltaic materials

Investigation of temperature-dependent electrical properties of p-VOPc/n-si heterojunction under dark conditions

Contact Info

Product

Resources

About